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STPSC20065CWL

STMicroelectronics

STPSC20065CWL by STMicroelectronics

STPSC20065CWL by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max reverse voltage of 650V, forward current of 10A, and operates from -40 °C. Its compact flange mount design ensures efficient performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,660 parts In-Stock

1+ parts

-

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6,660

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Digiode

USA . 4,002 parts In-Stock

1+ parts

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4,002

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Anansix

USA . 1,228 parts In-Stock

1+ parts

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1,228

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,971 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

$0.092

10k+ parts

-

1,971

$0.102

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$0.092

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MKK Technologies

India . 1,534 parts In-Stock

1+ parts

$0.192

100+ parts

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10k+ parts

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1,534

$0.192

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DigiPath Technology Company

USA . 1,534 parts In-Stock

1+ parts

$0.192

100+ parts

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10k+ parts

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1,534

$0.192

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AZTECH Wire

Italy . 412 parts In-Stock

1+ parts

$14.990

100+ parts

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412

$14.990

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Microchip USA

USA . 193 parts In-Stock

1+ parts

$29.129

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193

$29.129

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 1,585 parts In-Stock

1+ parts

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1,585

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Parana Technologies

USA . 833 parts In-Stock

1+ parts

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100+ parts

$0.122

1k+ parts

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833

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$0.122

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Overview

Unlock unparalleled performance with the STPSC20065CWL diode from STMicroelectronics! Engineered with cutting-edge Silicon Carbide technology, this power rectifier ensures exceptional efficiency and reliability for a variety of applications. With its robust design and impressive voltage capabilities, it delivers unmatched stability even in extreme conditions. Trust in STMicroelectronics' legacy of quality to elevate your projects and maximize value—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection against environmental factors, making the diode suitable for long-term applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and allows for efficient use in various power applications.

Maximum Reverse Current: 130 uA

The low reverse current indicates minimal leakage, enhancing the overall efficiency of the device during operation.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs, making it easier to design compact electronic systems.

Reverse Test Voltage: 650 V

A high reverse test voltage ensures reliability under extreme conditions, making it suitable for high-voltage applications.

No. of Terminals: 3

The three terminals provide versatility in circuit connections, allowing for flexible design options in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design facilitates easy installation and secure placement on the PCB, enhancing mechanical stability.

Application: POWER

Designed for power applications, this diode efficiently handles high currents, making it ideal for power supply and conversion tasks.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40 °C ensures reliability in harsh environments, broadening the range of possible applications.

Terminal Position: SINGLE

A single terminal position simplifies PCB layout and assembly processes, leading to more straightforward manufacturing.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting AC to DC, essential for many electronic devices.

Maximum Forward Voltage (VF): 1.88 V

The low forward voltage ensures minimal power loss during operation, enhancing efficiency and thermal performance.

Maximum Output Current: 10 A

A maximum output current of 10 A makes this diode suitable for handling significant loads in industrial and consumer applications.

Technology: SCHOTTKY

Schottky technology provides faster switching speeds and lower forward voltage drop, improving overall efficiency in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical retention and are well-suited for high-power applications, enhancing reliability.

No. of Elements: 2

Having two elements allows for increased versatility in circuit designs, enabling dual functionality in rectification.

Maximum Repetitive Peak Reverse Voltage: 650 V

The maximum repetitive peak reverse voltage ensures the diode can withstand significant voltage spikes, adding to its reliability.

Maximum Non Repetitive Peak Forward Current: 39 A

The high maximum non-repetitive forward current capability allows the diode to handle short bursts of high power, making it suitable for demanding applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide as the diode element material enhances thermal conductivity and electrical efficiency, making it ideal for high-performance applications.

Technical Specifications

Diodes & Rectifiers STPSC20065CWL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.88 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

39 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

130 uA

Reverse Test Voltage:

650 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC20065CWL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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