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STPSC16H065AW

STMicroelectronics

STPSC16H065AW by STMicroelectronics

STPSC16H065AW from STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max output current of 16 A, a peak reverse voltage of 650 V, and operates b/w -40 °C to 175 °C. Ideal for power management in various electronic devices.

Median Price

$4.660

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 365 parts In-Stock

1+ parts

$4.660

100+ parts

$2.750

1k+ parts

$2.540

10k+ parts

$2.530

365

$4.660

$2.750

$2.540

$2.530

DigiKey

USA . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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118

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Distributors (In-Stock)

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Digiode

USA . 3,044 parts In-Stock

1+ parts

$5.149

100+ parts

-

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-

10k+ parts

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3,044

$5.149

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Vyrian

USA . 9,921 parts In-Stock

1+ parts

-

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9,921

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Anansix

USA . 2,536 parts In-Stock

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2,536

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 460 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

$0.133

10k+ parts

-

460

$0.148

-

$0.133

-

MKK Technologies

India . 1,666 parts In-Stock

1+ parts

$0.279

100+ parts

-

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1,666

$0.279

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DigiPath Technology Company

USA . 1,666 parts In-Stock

1+ parts

$0.279

100+ parts

-

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10k+ parts

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1,666

$0.279

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Corphita

USA . 4,723 parts In-Stock

1+ parts

$4.878

100+ parts

-

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4,723

$4.878

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Component Stockers USA

USA . 674 parts In-Stock

1+ parts

$5.420

100+ parts

$3.990

1k+ parts

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674

$5.420

$3.990

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Microchip USA

USA . 6,351 parts In-Stock

1+ parts

$16.380

100+ parts

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6,351

$16.380

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Parana Technologies

USA . 924 parts In-Stock

1+ parts

-

100+ parts

$0.177

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924

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$0.177

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Authorized Procurement Solutions

USA . 240 parts In-Stock

1+ parts

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240

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Overview

Unlock the potential of your projects with the STPSC16H065AW from STMicroelectronics, a leader in semiconductor innovation. This high-performance Schottky diode enhances efficiency and reliability in demanding applications, delivering a robust solution for power management. With its impressive thermal resilience and minimal reverse current, it ensures long-lasting performance, helping you save energy and reduce costs while driving excellence in your designs. Choose STMicroelectronics for unmatched quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection from environmental factors, making it suitable for a wide range of applications.

Config: SINGLE

A single configuration simplifies integration into circuits, allowing for easier implementation in designs.

Maximum Reverse Current: 140 uA

A low reverse current enhances efficiency and minimizes power loss, which is crucial in high-performance applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for more compact designs without sacrificing performance.

No. of Terminals: 3

Three terminals offer versatile connections, which can simplify circuit design and improve reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount packages provide sturdy mounting options, enhancing physical stability in various applications.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes energy loss, making it ideal for energy-sensitive projects.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature ensures reliable performance in demanding environments, increasing its applicability across industries.

Minimum Operating Temperature: -40 °C

The wide temperature range allows this diode to function effectively in extreme conditions, enhancing its versatility.

Terminal Position: SINGLE

Single terminal positioning is advantageous for straightforward connections and simplifies circuit routing.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply and conversion applications.

Maximum Forward Voltage (VF): 1.75 V

A low forward voltage drop enhances overall energy efficiency, reducing heat generation and improving system performance.

Maximum Output Current: 16 A

A high output current capability supports robust applications, ensuring reliability under heavy load conditions.

Technology: SCHOTTKY

Schottky technology provides rapid switching capabilities, making this diode suitable for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, enhancing durability in rugged environments.

Maximum Repetitive Peak Reverse Voltage: 650 V

A high reverse voltage rating ensures stability and reliability in high-voltage applications, protecting the circuit from breakdown.

Maximum Non Repetitive Peak Forward Current: 105 A

The ability to handle high peak forward currents makes this diode suitable for demanding transient applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide ensures superior performance and thermal conductivity, allowing for higher efficiency and lower thermal impact.

Technical Specifications

Diodes & Rectifiers STPSC16H065AW attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

105 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

140 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC16H065AW Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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