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STPSC12H065CT

STMicroelectronics

STPSC12H065CT by STMicroelectronics

STPSC12H065CT by STMicroelectronics is a Schottky rectifier diode with 650V peak reverse voltage, 6A output current, and 1.75V forward voltage. Commonly used in power applications due to its silicon carbide element material and flange mount package style for efficient heat dissipation.

Median Price

$4.070

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,140 parts In-Stock

1+ parts

$4.070

100+ parts

$4.030

1k+ parts

$4.020

10k+ parts

-

2,140

$4.070

$4.030

$4.020

-

Element14

Singapore . 2,142 parts In-Stock

1+ parts

$11.870

100+ parts

$8.710

1k+ parts

$8.380

10k+ parts

-

2,142

$11.870

$8.710

$8.380

-

EBV Elektronik

Germany . 600 parts In-Stock

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-

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600

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Verical

USA . 300 parts In-Stock

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300

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Arrow

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$2.660

1k+ parts

$2.230

10k+ parts

-

300

-

$2.660

$2.230

-

Distributors (In-Stock)

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Digiode

USA . 4,573 parts In-Stock

1+ parts

$3.696

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4,573

$3.696

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Vyrian

USA . 8,788 parts In-Stock

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8,788

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Anansix

USA . 2,479 parts In-Stock

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2,479

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Fibra_Brandt Electronic GMBH

Germany . 30 parts In-Stock

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30

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,854 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

$0.051

10k+ parts

-

1,854

$0.057

-

$0.051

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MKK Technologies

India . 434 parts In-Stock

1+ parts

$0.107

100+ parts

-

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434

$0.107

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DigiPath Technology Company

USA . 434 parts In-Stock

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$0.107

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434

$0.107

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Corphita

USA . 1,122 parts In-Stock

1+ parts

$3.501

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1,122

$3.501

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Continental Prestige Electronics

USA . 2,000 parts In-Stock

1+ parts

$4.240

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2,000

$4.240

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Microchip USA

USA . 486 parts In-Stock

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$14.183

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486

$14.183

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 6,479 parts In-Stock

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6,479

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Parana Technologies

USA . 2,127 parts In-Stock

1+ parts

-

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$0.068

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2,127

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$0.068

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Kepictronics

USA . 440 parts In-Stock

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440

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Glotronic Ltd.

UK . 240 parts In-Stock

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240

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Overview

Discover the power of the STPSC12H065CT from STMicroelectronics, a high-quality Schottky rectifier diode designed for demanding power applications. With a maximum repetitive peak reverse voltage of 650V and a maximum output current of 6A, this diode offers superior performance and reliability. Its common cathode configuration and through-hole terminal form make it easy to integrate into your projects. Trust in the expertise of STMicroelectronics to provide you with cutting-edge technology that meets your needs. Elevate your designs with the STPSC12H065CT and experience the benefits of top-notch quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, making the diode resilient to external factors.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and better power distribution.

Maximum Reverse Current: 60 uA

Low reverse current ensures minimal power loss and improved efficiency of the diode.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to mount and install the diode in various electronic devices.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode to different parts of a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers stability and secure mounting of the diode in power applications.

Application: POWER

Specifically designed for power applications, ensuring optimal performance in high-power circuits.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows the diode to function effectively in extreme environments.

Terminal Position: SINGLE

Single terminal position simplifies installation and connectivity of the diode within a circuit.

Case Connection: CATHODE

Cathode case connection offers easy identification and installation of the diode within the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC current, making it suitable for power applications.

Maximum Forward Voltage (VF): 1.75 V

Low forward voltage minimizes power loss and heat generation, enhancing the overall efficiency of the diode.

Maximum Output Current: 6 A

High output current capacity allows the diode to handle large loads and deliver consistent power.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, improving the performance of the diode.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers secure connections and easy soldering, ensuring reliable circuit integration.

No. of Elements: 2

Having 2 elements provides redundancy and ensures continuous operation in case of failure of one element.

Maximum Repetitive Peak Reverse Voltage: 650 V

High reverse voltage rating allows the diode to handle large voltage fluctuations and protect the circuit from damage.

Maximum Non Repetitive Peak Forward Current: 52 A

High non-repetitive peak forward current capacity ensures the diode can handle sudden surges in current without failing.

Diode Element Material: SILICON CARBIDE

Silicon carbide material offers high temperature tolerance and efficiency, making the diode suitable for demanding applications.

Technical Specifications

Diodes & Rectifiers STPSC12H065CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

52 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

60 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC12H065CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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