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STPSC12C065DY

STMicroelectronics

STPSC12C065DY by STMicroelectronics

STPSC12C065DY from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max output current of 12 A, operates at temperatures from -40 °C to 175 °C, and supports up to 650 V reverse voltage. Its robust design ensures reliability in demanding environments.

Median Price

$2.330

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 407 parts In-Stock

1+ parts

$1.869

100+ parts

-

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407

$1.869

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Mouser Electronics

USA . 169 parts In-Stock

1+ parts

$2.790

100+ parts

$1.750

1k+ parts

$1.600

10k+ parts

-

169

$2.790

$1.750

$1.600

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Chip1Stop

Japan . 407 parts In-Stock

1+ parts

$2.970

100+ parts

-

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407

$2.970

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Future Electronics

Canada . 900 parts In-Stock

1+ parts

-

100+ parts

$1.510

1k+ parts

$1.460

10k+ parts

$1.450

900

-

$1.510

$1.460

$1.450

Verical

USA . 407 parts In-Stock

1+ parts

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407

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DigiKey

USA . 154 parts In-Stock

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154

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Digiode

USA . 3,384 parts In-Stock

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$1.776

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3,384

$1.776

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Vyrian

USA . 5,027 parts In-Stock

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5,027

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Anansix

USA . 2,856 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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ComSIT USA

USA . 2,000 parts In-Stock

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IBS Electronics

USA . 900 parts In-Stock

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$2.210

1k+ parts

$2.106

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900

-

$2.210

$2.106

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,033 parts In-Stock

1+ parts

$0.175

100+ parts

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1k+ parts

$0.157

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2,033

$0.175

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$0.157

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MKK Technologies

India . 793 parts In-Stock

1+ parts

$0.329

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793

$0.329

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DigiPath Technology Company

USA . 793 parts In-Stock

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$0.329

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793

$0.329

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Corphita

USA . 4,039 parts In-Stock

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$1.682

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$1.682

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Microchip USA

USA . 3,781 parts In-Stock

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$27.690

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3,781

$27.690

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Parana Technologies

USA . 1,248 parts In-Stock

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$0.209

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1,248

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$0.209

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Kepictronics

USA . 500 parts In-Stock

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Overview

Unlock superior performance with the STPSC12C065DY Schottky diode from STMicroelectronics, a leader in innovative semiconductor solutions. Engineered for power applications, this robust diode promises exceptional efficiency and reliability even in extreme conditions, ranging from -40 °C to 175 °C. Trust in STMicroelectronics' commitment to quality for your next project, and enjoy enhanced energy savings and durability that translate into real value for your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making this diode suitable for demanding applications.

Configuration: SINGLE

A single configuration allows for simpler designs and ease of integration into various circuits.

Maximum Reverse Current: 120 uA

A low maximum reverse current minimizes power loss during operation, enhancing energy efficiency.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, facilitating efficient use of circuit board space.

Number of Terminals: 2

Two terminals offer a straightforward connection interface, simplifying circuit design and assembly.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers secure installation options, ensuring stability in application under various conditions.

Application: POWER

Designed for power applications, this diode can handle higher currents and voltages, making it ideal for power management.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows the diode to perform reliably in extreme environments.

Minimum Operating Temperature: -40 °C

The capability to operate at low temperatures ensures functionality in a wide range of climate conditions.

Terminal Position: SINGLE

Single terminal positioning contributes to ease of mounting and reduces potential soldering issues.

Case Connection: CATHODE

With a cathode connection, this diode ensures optimal electrical performance in reverse polarity applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 indicates high reliability and quality well-suited for automotive and industrial applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it's designed for efficient conversion of AC to DC, making it essential in power supply circuits.

Maximum Forward Voltage (VF): 1.75 V

A low forward voltage drop enhances efficiency by reducing the energy lost as heat during operation.

Maximum Output Current: 12 A

Capable of handling up to 12 A, this diode can support high-current applications effectively.

Technology: SCHOTTKY

Schottky technology offers fast switching times and reduced forward voltage drop, making it highly efficient for power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ensuring reliability in various environments.

Maximum Repetitive Peak Reverse Voltage: 650 V

The high peak reverse voltage tolerance allows this diode to operate safely in high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 84 A

An impressive non-repetitive peak forward current capability enables the diode to withstand surges and spikes in current.

Diode Element Material: SILICON CARBIDE

Silicon carbide material provides superior thermal conductivity and efficiency, enhancing performance in high-power applications.

Technical Specifications

Diodes & Rectifiers STPSC12C065DY attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

84 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

120 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC12C065DY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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