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STPSC12065G-TR

STMicroelectronics

STPSC12065G-TR by STMicroelectronics

STPSC12065G-TR by STMicroelectronics is a high-efficiency Schottky rectifier diode with a max reverse voltage of 650 V and output current of 12 A. It features low VF at 1.45 V, ensuring optimal performance in compact applications. Ideal for power management in harsh environments (-40 °C).

Median Price

$3.570

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 900 parts In-Stock

1+ parts

$3.570

100+ parts

$2.050

1k+ parts

$1.660

10k+ parts

-

900

$3.570

$2.050

$1.660

-

EBV Elektronik

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

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-

-

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Distributors (In-Stock)

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Digiode

USA . 1,144 parts In-Stock

1+ parts

$3.392

100+ parts

-

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10k+ parts

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1,144

$3.392

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Vyrian

USA . 6,973 parts In-Stock

1+ parts

-

100+ parts

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6,973

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-

-

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Anansix

USA . 2,716 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,716

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,782 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

$0.126

10k+ parts

-

1,782

$0.140

-

$0.126

-

MKK Technologies

India . 1,697 parts In-Stock

1+ parts

$0.263

100+ parts

-

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10k+ parts

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1,697

$0.263

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-

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DigiPath Technology Company

USA . 1,697 parts In-Stock

1+ parts

$0.263

100+ parts

-

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-

10k+ parts

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1,697

$0.263

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-

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Corphita

USA . 4,469 parts In-Stock

1+ parts

$3.213

100+ parts

-

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4,469

$3.213

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Microchip USA

USA . 8,327 parts In-Stock

1+ parts

$14.674

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8,327

$14.674

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

1+ parts

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5,000

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Eastek

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Parana Technologies

USA . 2,332 parts In-Stock

1+ parts

-

100+ parts

$0.167

1k+ parts

-

10k+ parts

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2,332

-

$0.167

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RC Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

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A-Z Elektronik GmbH

Germany . 1,716 parts In-Stock

1+ parts

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100+ parts

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1,716

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Overview

Elevate your designs with the STPSC12065G-TR from STMicroelectronics, a leading innovator in semiconductor technology. This high-performance rectifier diode combines exceptional efficiency and reliability, making it ideal for demanding applications. With its robust silicon carbide construction, you can trust its superior thermal management and impressive voltage handling. Choose STMicroelectronics for quality you can depend on—empowering your projects with cutting-edge solutions!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides excellent durability and resistance to environmental factors, making this diode reliable in various applications.

Config: SINGLE

The single configuration allows for simpler circuit design and helps in saving space on circuit boards.

Surface Mount: YES

Being surface mount technology (SMT) compatible facilitates automated assembly, reduces manufacturing costs, and improves reliability.

Maximum Reverse Current: 150 uA

A low reverse current enhances efficiency and minimizes power loss in reverse bias operation, making it ideal for high-performance applications.

Package Shape: RECTANGULAR

The rectangular shape contributes to efficient space utilization on PCB layouts, providing flexibility in design.

Reverse Test Voltage: 650 V

A high reverse test voltage indicates the diode's capability to withstand high voltage conditions, ensuring reliability in demanding applications.

No. of Terminals: 2

The straightforward two-terminal design simplifies connections and reduces the potential for errors in installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, making it ideal for space-constrained applications.

Application: EFFICIENCY

This diode is optimized for high efficiency, making it suitable for applications that require reduced power loss and improved thermal management.

Minimum Operating Temperature: -40 °C

A wide temperature range allows this diode to operate effectively in harsh environments, expanding its usability in diverse conditions.

Terminal Position: SINGLE

The single terminal position simplifies the layout and connection process, enhancing the ease of integration into various circuits.

Case Connection: CATHODE

The cathode case connection is standard in rectifier diodes, ensuring compatibility with established circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.45 V

A moderate forward voltage drop enhances energy efficiency, reducing power loss in applications where the diode conducts.

Maximum Output Current: 12 A

The high output current rating enables the diode to handle significant load currents, making it suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology allows for faster switching speeds and lower forward voltage drop, improving performance in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals facilitate better soldering and mechanical stability, enhancing the device's reliability on printed circuit boards.

Maximum Repetitive Peak Reverse Voltage: 650 V

A high repetitive peak reverse voltage enhances the diode's capability to withstand voltage transients, essential for robust design.

Maximum Non Repetitive Peak Forward Current: 40 A

The ability to handle high peak forward current makes this diode suitable for applications that experience pulse or surge conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide is known for its high thermal conductivity and efficiency, enabling operation at high temperatures and improving overall performance.

Technical Specifications

Diodes & Rectifiers STPSC12065G-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

SNUBBER DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.45 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

150 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC12065G-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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