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STPSC10H12CWL

STMicroelectronics

STPSC10H12CWL by STMicroelectronics

STPSC10H12CWL from STMicroelectronics is a Schottky rectifier diode ideal for high voltage power applications. It features a max reverse voltage of 1200 V, forward current of 19 A, and operates b/w -40 °C to 175 °C. Its flange mount design ensures reliable performance in demanding environments.

Median Price

$7.250

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip1Stop

Japan . 5 parts In-Stock

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$6.610

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5

$6.610

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Mouser Electronics

USA . 569 parts In-Stock

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$7.250

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$5.110

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$4.420

10k+ parts

$3.850

569

$7.250

$5.110

$4.420

$3.850

DigiKey

USA . 603 parts In-Stock

1+ parts

$7.820

100+ parts

$3.890

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$3.326

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603

$7.820

$3.890

$3.326

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Avnet

USA . 1,650 parts In-Stock

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Digiode

USA . 4,625 parts In-Stock

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$6.280

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Vyrian

USA . 7,474 parts In-Stock

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Anansix

USA . 2,091 parts In-Stock

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IDEA Electronic Components Group

UK . 1,101 parts In-Stock

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$0.129

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$0.116

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1,101

$0.129

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$0.116

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MKK Technologies

India . 435 parts In-Stock

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$0.242

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435

$0.242

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DigiPath Technology Company

USA . 435 parts In-Stock

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$0.242

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435

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Corphita

USA . 1,345 parts In-Stock

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$5.949

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Microchip USA

USA . 7,161 parts In-Stock

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$23.016

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Kepictronics

USA . 6,865 parts In-Stock

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RC Electronics

USA . 5,000 parts In-Stock

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Parana Technologies

USA . 1,550 parts In-Stock

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$0.154

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Perfect Parts

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GreenTree Electronics

Israel . 600 parts In-Stock

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Eastek

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Overview

Unlock unparalleled efficiency and reliability with the STPSC10H12CWL from STMicroelectronics. This high-performance Schottky diode is designed for high voltage power applications, ensuring optimum thermal management and robust performance even in extreme temperatures. With a compact flange mount design and a reputation for quality, STMicroelectronics delivers exceptional value, enabling your projects to thrive while minimizing energy loss and boosting overall system longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient current conduction, making it ideal for high power applications.

Maximum Reverse Current: 30 uA

A low reverse current rating enhances the efficiency and reliability of the diode, minimizing power losses.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating easier integration into various designs.

No. of Terminals: 3

Three terminals provide a versatile interface, simplifying connections and enabling easier circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers strong mechanical support and heat dissipation, improving the overall robustness of the diode.

Application: HIGH VOLTAGE POWER

Designed for high voltage applications, this diode ensures reliability and performance in demanding conditions.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature expands the range of environments where this diode can function effectively.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature guarantees reliable performance in extreme cold conditions.

Terminal Position: SINGLE

Single terminal positioning allows for straightforward layout on circuit boards, promoting design simplicity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, catering to a wide range of electronic applications.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage improves energy efficiency, leading to lower heat generation during operation.

Maximum Output Current: 19 A

A high output current rating enables the diode to handle demanding loads, making it suitable for high power circuits.

Technology: SCHOTTKY

Schottky technology reduces forward voltage drop and enhances switching speeds, providing superior performance in fast-switching applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures strong mechanical connections and is easy to solder, providing reliable contacts.

No. of Elements: 2

Having two elements allows for better power handling and flexibility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 1200 V

A high peak reverse voltage capacity makes it suitable for high voltage applications, ensuring safe operation under extreme conditions.

Maximum Non Repetitive Peak Forward Current: 30 A

A high non-repetitive peak current rating allows for the handling of surges, providing additional reliability during transient conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide material offers superior thermal conductivity and efficiency, enabling operation at higher temperatures and voltages.

Technical Specifications

Diodes & Rectifiers STPSC10H12CWL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

30 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

19 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

30 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC10H12CWL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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