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STPSC10H12B-TR1

STMicroelectronics

STPSC10H12B-TR1 by STMicroelectronics

STPSC10H12B-TR1 from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max output current of 10 A, reverse voltage of 1200 V, and operates b/w -40 °C to 175 °C. Its compact design ensures efficient surface mount integration.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 7,412 parts In-Stock

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Semi Source

USA . 2,500 parts In-Stock

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2,500

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Anansix

USA . 2,491 parts In-Stock

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Digiode

USA . 335 parts In-Stock

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335

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IDEA Electronic Components Group

UK . 1,685 parts In-Stock

1+ parts

$0.179

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$0.161

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1,685

$0.179

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$0.161

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MKK Technologies

India . 2,363 parts In-Stock

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$0.337

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$0.337

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DigiPath Technology Company

USA . 2,363 parts In-Stock

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$0.337

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$0.337

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Ampacity Inc.

Singapore . 1,495 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 173 parts In-Stock

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$15.580

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QUARKTWIN TECHNOLOGY LTD

USA . 8,866 parts In-Stock

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Perfect Parts

USA . 5,600 parts In-Stock

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Corphita

USA . 4,889 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,443 parts In-Stock

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Parana Technologies

USA . 741 parts In-Stock

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$0.214

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741

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$0.214

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Overview

Unlock superior performance with the STPSC10H12B-TR1 from STMicroelectronics, a leading name in innovative electronic solutions. This advanced Schottky rectifier diode is crafted for power applications, offering exceptional efficiency and reliability even in extreme temperatures. With its compact design and surface mount capability, it's perfect for modern electronics, ensuring durability while driving down energy loss. Elevate your projects with quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic epoxy ensures a lightweight and durable package, providing excellent protection against environmental factors.

Config: SINGLE

A single configuration simplifies the integration into circuits, making it easier for designers to implement.

Surface Mount: YES

Surface mount capability allows for space-efficient design and automated assembly processes, reducing overall manufacturing costs.

Maximum Reverse Current: 60 uA

The low maximum reverse current indicates minimal leakage, making this diode efficient, especially in power applications.

Package Shape: RECTANGULAR

The rectangular shape helps in optimal space utilization on printed circuit boards (PCBs), enabling compact designs.

No. of Terminals: 2

Having only two terminals simplifies the design and reduces the possibility of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suitable for tight spaces and high-density applications.

Application: POWER

Designed for power applications, this diode can handle high currents and voltages, making it reliable for demanding conditions.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature indicates the diode's ability to function reliably in extreme conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range ensures performance in various environmental conditions, enhancing reliability.

Terminal Position: SINGLE

Single terminal position facilitates simpler layout designs and assembly processes.

Case Connection: CATHODE

The cathode connection is standard, making it compatible with a wide range of circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for directing current efficiently, providing effective rectification in power systems.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage drop minimizes power loss during operation, improving overall system efficiency.

Maximum Output Current: 10 A

Capable of handling up to 10 A, this diode is ideal for high-current applications.

Technology: SCHOTTKY

Schottky technology offers lower forward voltage and faster switching times, making it suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals allow for easy handling and placement on PCBs, enhancing assembly efficiency.

Maximum Repetitive Peak Reverse Voltage: 1200 V

A high peak reverse voltage capability ensures robust performance in high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 60 A

The ability to handle high non-repetitive peak forward currents enhances reliability under transient conditions.

Diode Element Material: SILICON CARBIDE

Silicon carbide offers exceptional thermal conductivity and efficiency, making this diode suitable for high-performance applications.

Technical Specifications

Diodes & Rectifiers STPSC10H12B-TR1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

60 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPSC10H12B-TR1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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