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STPS8H100G

STMicroelectronics

STPS8H100G by STMicroelectronics

STMicroelectronics STPS8H100G is a Schottky rectifier diode with 100V reverse voltage and 8A output current. It operates at a max temperature of 175 °C, making it suitable for high voltage power applications. The diode has a forward voltage of 0.81V and can handle non-repetitive peak forward currents up to 250A.

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 12 parts In-Stock

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$1.650

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12

$1.650

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Future Electronics

Canada . 300 parts In-Stock

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$0.630

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$0.600

10k+ parts

$0.570

300

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$0.630

$0.600

$0.570

Distributors (In-Stock)

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Digiode

USA . 2,153 parts In-Stock

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$1.482

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$1.482

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Bristol Electronics

USA . 1,000 parts In-Stock

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$3.010

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$1.415

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$1.294

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1,000

$3.010

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Vyrian

USA . 10,493 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,331 parts In-Stock

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Anansix

USA . 1,621 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Dan-Mar Components

USA . 1,000 parts In-Stock

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IBS Electronics

USA . 300 parts In-Stock

1+ parts

-

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$0.884

1k+ parts

$0.842

10k+ parts

$0.799

300

-

$0.884

$0.842

$0.799

A&K Electronics

USA . 160 parts In-Stock

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Rotakorn

Sweden . 160 parts In-Stock

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160

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Component Sense

UK . 64 parts In-Stock

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$1.250

64

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$1.250

Microfarads

USA . 48 parts In-Stock

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48

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Cyclops Electronics Ltd

UK . 23 parts In-Stock

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LWI Electronics Inc

India . 20 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 18 parts In-Stock

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Prism Electronics

USA . 14 parts In-Stock

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IDEA Electronic Components Group

UK . 1,610 parts In-Stock

1+ parts

$0.145

100+ parts

-

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$0.131

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1,610

$0.145

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$0.131

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MKK Technologies

India . 13 parts In-Stock

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$0.273

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13

$0.273

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DigiPath Technology Company

USA . 13 parts In-Stock

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$0.273

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13

$0.273

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Corphita

USA . 4,118 parts In-Stock

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$1.404

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$1.404

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Microchip USA

USA . 393 parts In-Stock

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$10.075

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 5,708 parts In-Stock

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Parana Technologies

USA . 2,036 parts In-Stock

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$0.174

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kepictronics

USA . 646 parts In-Stock

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Assy Fe

Spain . 10 parts In-Stock

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Montclair Electronics, Inc.

USA . 6 parts In-Stock

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Overview

Discover the STPS8H100G by STMicroelectronics, a high-quality rectifier diode designed for high voltage power applications. With its SCHOTTKY technology and maximum output current of 8A, this diode offers reliable performance and efficient power management. Manufactured by STMicroelectronics, a leading name in the industry, you can trust in the durability and precision of this product. Ideal for a wide range of electronic devices, the STPS8H100G provides customers with a cost-effective solution for their power needs. Choose quality, choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the diode, making it suitable for high voltage power applications.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to use in various projects.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, making it ideal for applications where space is limited.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, making it more straightforward for users to integrate into their circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for a more efficient use of space on the circuit board, enabling a more compact overall design.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode is capable of handling significant levels of voltage, making it a reliable choice for such applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this diode can withstand high temperatures, ensuring consistent performance in demanding conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides a reliable connection and the annealed finish enhances the durability of the terminals, ensuring long-term performance.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and ensures that the diode is connected correctly, reducing the risk of errors.

Case Connection: CATHODE

The cathode case connection ensures proper orientation during installation, making it easier for users to connect the diode correctly.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this diode is designed for efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 245

The peak reflow temperature of 245 °C ensures proper soldering of the diode during assembly, resulting in a secure and reliable connection.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current to direct current, making it suitable for a wide range of applications.

Maximum Forward Voltage (VF): 0.81 V

The low maximum forward voltage of 0.81V ensures minimal power loss and efficient operation, making this diode a cost-effective choice.

Maximum Output Current: 8 A

With a maximum output current of 8A, this diode is capable of handling significant levels of current, making it suitable for high power applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, making it ideal for high frequency and high efficiency applications.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and reliable connection, ensuring stable performance in various operating conditions.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a maximum repetitive peak reverse voltage of 100V, this diode offers reliable protection against reverse voltage, ensuring the safety of the circuit.

Maximum Non Repetitive Peak Forward Current: 250 A

The high maximum non-repetitive peak forward current of 250A allows the diode to handle short-term high current spikes without damage, ensuring reliable performance.

Diode Element Material: SILICON

Constructed with silicon diode element material, this product offers high efficiency and reliability, making it a durable choice for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS8H100G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.81 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS8H100G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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