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STPS80H100CY

STMicroelectronics

STPS80H100CY by STMicroelectronics

STMicroelectronics STPS80H100CY is a Schottky rectifier diode with 100V peak reverse voltage and 40A output current. Common cathode configuration, suitable for high voltage power applications. Features matte tin terminals in a rectangular package style.

Median Price

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Lifecycle Status

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11

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Vyrian

USA . 9,597 parts In-Stock

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Anansix

USA . 1,477 parts In-Stock

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Digiode

USA . 920 parts In-Stock

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Lakeland Logistics Inc

USA . 870 parts In-Stock

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ComSIT Distribution GmbH

Germany . 767 parts In-Stock

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Bristol Electronics

USA . 614 parts In-Stock

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Cyclops Electronics Ltd

UK . 180 parts In-Stock

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Extreme Components

USA . 60 parts In-Stock

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Sea View Technologies

USA . 24 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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ECAB

Sweden . 8 parts In-Stock

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IDEA Electronic Components Group

UK . 1,186 parts In-Stock

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$0.070

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$0.063

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MKK Technologies

India . 632 parts In-Stock

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$0.131

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DigiPath Technology Company

USA . 632 parts In-Stock

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AZTECH Wire

Italy . 1,015 parts In-Stock

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Corphita

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Kepictronics

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Perfect Parts

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Parana Technologies

USA . 668 parts In-Stock

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Authorized Procurement Solutions

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Epart123

USA . 180 parts In-Stock

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$19.660

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GreenTree Electronics

Israel . 180 parts In-Stock

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Overview

Unlock the potential of high voltage power applications with the STPS80H100CY by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. This rectifier diode offers a maximum repetitive peak reverse voltage of 100 V and a maximum output current of 40 A, making it ideal for a wide range of applications. With a common cathode configuration and innovative Schottky technology, this diode provides customers with unrivaled performance and efficiency. Trust STMicroelectronics to deliver cutting-edge solutions for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diodes, making them resistant to environmental factors and ensuring durability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient voltage regulation and power distribution in circuits.

Package Shape: RECTANGULAR

Rectangular shape provides ease of handling and installation in various electronic devices.

Application: HIGH VOLTAGE POWER

Designed specifically for high voltage power applications, ensuring reliable performance under demanding conditions.

Maximum Output Current: 40 A

With a high maximum output current of 40A, this diode is capable of handling heavy loads and ensuring efficient power delivery.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop, high switching speeds, and lower power dissipation, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a maximum repetitive peak reverse voltage of 100V, this diode can handle high reverse voltages to protect circuits from potential damage.

Diode Element Material: SILICON

Silicon diode element material ensures reliable performance, high efficiency, and stable operation over a wide range of temperatures.

Technical Specifications

Diodes & Rectifiers STPS80H100CY attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.94 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Trade Compliance

STPS80H100CY Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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