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STPS60A150CS1

STMicroelectronics

STPS60A150CS1 by STMicroelectronics

STPS60A150CS1 from STMicroelectronics is a Schottky rectifier diode with a max reverse voltage of 150V and output current of 30A. It features a ceramic, metal-sealed package and operates b/w -65 °C to 175 °C. Ideal for high-efficiency power applications.

Median Price

$419.000

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 6 parts In-Stock

1+ parts

$405.570

100+ parts

$400.880

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6

$405.570

$400.880

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Arrow

USA . 6 parts In-Stock

1+ parts

$416.300

100+ parts

$400.880

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6

$416.300

$400.880

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Chip1Stop

Japan . 6 parts In-Stock

1+ parts

$419.000

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-

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6

$419.000

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DigiKey

USA . 2 parts In-Stock

1+ parts

$440.780

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2

$440.780

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Mouser Electronics

USA . 17 parts In-Stock

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$486.400

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17

$486.400

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Distributors (In-Stock)

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Digiode

USA . 1,767 parts In-Stock

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$385.292

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1,767

$385.292

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Vyrian

USA . 8,990 parts In-Stock

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8,990

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Anansix

USA . 142 parts In-Stock

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142

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,827 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

$0.036

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1,827

$0.040

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$0.036

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MKK Technologies

India . 466 parts In-Stock

1+ parts

$0.074

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466

$0.074

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DigiPath Technology Company

USA . 466 parts In-Stock

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$0.074

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466

$0.074

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Corphita

USA . 1,128 parts In-Stock

1+ parts

$365.013

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1,128

$365.013

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Parana Technologies

USA . 91 parts In-Stock

1+ parts

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$0.047

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91

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$0.047

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Overview

Unleash the power of efficiency with the STPS60A150CS1 Schottky diode from STMicroelectronics. Renowned for their quality and reliability, STMicroelectronics delivers a product that excels in high-performance applications. With exceptional thermal stability and low reverse current, this diode ensures optimal operation even under extreme conditions. Ideal for power management and renewable energy systems, it provides unmatched value by enhancing system longevity and reducing energy losses, making it a smart choice for your next design!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable and robust packaging material ensures excellent thermal performance and reliability in harsh environments.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for easy integration into various circuit designs while providing efficient performance.

Surface Mount: YES

The surface mount feature facilitates automated assembly and reduces board space, making it ideal for modern electronics.

Maximum Reverse Current: 14 uA

A low reverse current contributes to higher efficiency and minimizes power losses in applications, enhancing overall performance.

Package Shape: RECTANGULAR

The rectangular shape allows for better space utilization on PCB layouts, optimizing design efficiency.

Reverse Test Voltage: 150 V

This high reverse test voltage rating ensures robustness and reliability in high-stress environments.

No. of Terminals: 3

With three terminals, this diode can support various circuit configurations, improving versatility in applications.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers excellent thermal and electrical performance, particularly in high-power applications.

Maximum Operating Temperature: 175 °C

The ability to operate at high temperatures makes this diode suitable for demanding applications in extreme conditions.

Minimum Operating Temperature: -65 °C

A wide operating temperature range ensures reliable performance in diverse environmental conditions, enhancing application flexibility.

Terminal Position: BOTTOM

Bottom terminal positioning aids in efficient thermal management and improves the overall stability of the component in circuits.

Case Connection: CATHODE

The cathode connection ensures straightforward integration in rectifier applications, maintaining clarity in circuit design.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it excels in converting alternating current (AC) to direct current (DC), critical for power supply applications.

Maximum Forward Voltage (VF): 0.99 V

Low forward voltage drop ensures high efficiency, reducing heat generation and improving the overall performance of the circuit.

Maximum Output Current: 30 A

With a high output current rating, this diode can handle significant power requirements, making it suitable for various applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage, improving efficiency in high-frequency applications.

Terminal Form: NO LEAD

No lead design facilitates improved thermal performance and reduces footprint on PCBs, supporting compact device designs.

No. of Elements: 2

Having two elements increases reliability and redundancy in design, offering enhanced performance in critical applications.

Maximum Repetitive Peak Reverse Voltage: 150 V

A high peak reverse voltage rating allows this diode to handle significant voltage spikes, increasing durability in dynamic circuits.

Maximum Non-Repetitive Peak Forward Current: 190 A

The capability to withstand high non-repetitive currents makes this diode ideal for applications with transient loads and pulses.

Diode Element Material: SILICON

Silicon provides good electrical properties and thermal stability, ensuring reliable operation in various electronic applications.

Technical Specifications

Diodes & Rectifiers STPS60A150CS1 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.99 V

JESD-30 Code:

R-CBCC-N3

Maximum Non Repetitive Peak Forward Current:

190 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

30 A

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

14 uA

Reverse Test Voltage:

150 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS60A150CS1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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