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STPS50U100CR

STMicroelectronics

STPS50U100CR by STMicroelectronics

STPS50U100CR by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.7 V and supports up to 25 A output current. It features a common cathode configuration in a flange mount package, ideal for efficient power applications. With a peak reverse voltage of 100 V, it ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,782 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,782

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-

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Digiode

USA . 4,818 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,818

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-

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Anansix

USA . 254 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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254

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 527 parts In-Stock

1+ parts

$0.131

100+ parts

-

1k+ parts

$0.118

10k+ parts

-

527

$0.131

-

$0.118

-

MKK Technologies

India . 1,344 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

-

1,344

$0.246

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-

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DigiPath Technology Company

USA . 1,344 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

-

1,344

$0.246

-

-

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AZTECH Wire

Italy . 1,179 parts In-Stock

1+ parts

$16.500

100+ parts

-

1k+ parts

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10k+ parts

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1,179

$16.500

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Corphita

USA . 3,361 parts In-Stock

1+ parts

-

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3,361

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Parana Technologies

USA . 370 parts In-Stock

1+ parts

-

100+ parts

$0.156

1k+ parts

-

10k+ parts

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370

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$0.156

-

-

Overview

Elevate your designs with the STPS50U100CR from STMicroelectronics, a trusted leader in semiconductor technology. This high-performance Schottky rectifier diode delivers exceptional efficiency and reliability, making it ideal for a wide range of applications, from power supplies to motor drives. With its robust construction and outstanding thermal stability, you can trust this diode to enhance your systems while maximizing performance and minimizing energy loss. Transform your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuit design and facilitates easy integration into various applications.

Package Shape: RECTANGULAR

The rectangular shape promotes efficient heat dissipation and optimal use of space on PCBs.

No. of Terminals: 3

Three terminals allow for versatile connections and improved circuit performance, accommodating various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability and ease of mounting, especially in high-current applications where reliability is critical.

Application: EFFICIENCY

Designed for efficient operation, this diode optimizes energy usage, making it ideal for power-sensitive applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring long-term performance in electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies layout and assembly in circuit designs, reducing assembly errors.

Case Connection: CATHODE

The cathode case connection type allows for seamless integration into standard circuit architectures.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC, crucial for various electronic applications.

Maximum Forward Voltage (VF): 0.7 V

A low forward voltage drop enhances efficiency, reducing power loss and heat generation during operation.

Maximum Output Current: 25 A

The capability to handle a maximum output current of 25 A makes this diode suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology minimizes switching losses and provides fast response times, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole mounting ensures solid mechanical connections and ease of heat dissipation, contributing to overall durability.

No. of Elements: 2

Having two elements enables better handling of high currents and improved overall performance in rectification tasks.

Maximum Repetitive Peak Reverse Voltage: 100 V

This high reverse voltage rating provides reliability in demanding applications, preventing breakdown in high-voltage environments.

Maximum Non Repetitive Peak Forward Current: 250 A

A high peak forward current rating allows this diode to handle significant surges, making it reliable for power supply applications.

Diode Element Material: SILICON

Made of silicon, this diode offers excellent electrical characteristics and thermal stability, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS50U100CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS50U100CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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