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STPS41L60CR

STMicroelectronics

STPS41L60CR by STMicroelectronics

STPS41L60CR by STMicroelectronics is a Schottky rectifier diode designed for power applications. It features a max forward voltage of 0.58V, supports up to 20A output current, and has a peak reverse voltage of 60V. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,008 parts In-Stock

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7,008

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Digiode

USA . 4,865 parts In-Stock

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4,865

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Anansix

USA . 1,703 parts In-Stock

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1,703

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IDEA Electronic Components Group

UK . 1,212 parts In-Stock

1+ parts

$0.109

100+ parts

-

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$0.099

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1,212

$0.109

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$0.099

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MKK Technologies

India . 1,446 parts In-Stock

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$0.206

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$0.206

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DigiPath Technology Company

USA . 1,446 parts In-Stock

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$0.206

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1,446

$0.206

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AZTECH Wire

Italy . 373 parts In-Stock

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$13.930

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373

$13.930

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Component Stockers USA

USA . 405 parts In-Stock

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$99.990

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405

$99.990

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 1,459 parts In-Stock

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Parana Technologies

USA . 134 parts In-Stock

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$0.131

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$0.131

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Overview

Elevate your power management solutions with the STPS41L60CR Schottky rectifier from STMicroelectronics. Renowned for its exceptional quality, this diode ensures efficient performance and reliability in demanding applications. With a compact design and robust construction, it seamlessly integrates into power systems, enhancing efficiency and longevity. Trust in ST's legacy of innovation to boost your projects with outstanding value and superior benefits!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials enhances durability and resistance to environmental factors, making this diode suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easy integration in circuit designs that require multiple diodes, optimizing space and efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient space utilization on PCBs and aids in heat dissipation during operation.

No. of Terminals: 3

Having three terminals provides versatility in design, allowing for different connection configurations and simplifying assembly.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances mechanical stability and thermal performance, ensuring reliable operation under power conditions.

Application: POWER

Designed specifically for power applications, this diode can handle high currents without compromising performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and enhances corrosion resistance, improving longevity in applications.

Terminal Position: SINGLE

A single terminal position simplifies the installation process, reducing assembly time and potential errors.

Case Connection: CATHODE

With the cathode connection case, this diode provides straightforward polarity alignment during integration into circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 0.58 V

A low maximum forward voltage drop contributes to higher efficiency, reducing wasted power and thermal output.

Maximum Output Current: 20 A

The ability to handle up to 20 A makes this diode suitable for high-power applications, ensuring reliable performance under load.

Technology: SCHOTTKY

Schottky technology allows for higher switching speeds and lower forward voltage drops, enhancing overall circuit efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and easier handling during assembly, ideal for high-power applications.

No. of Elements: 2

Two diode elements increase performance capabilities, allowing for higher current handling and more effective circuit designs.

Maximum Repetitive Peak Reverse Voltage: 60 V

A high reverse voltage rating ensures reliable operation in circuits exposed to significant voltage spikes, enhancing durability.

Maximum Non Repetitive Peak Forward Current: 220 A

This high peak forward current rating allows the diode to withstand surge currents, making it ideal for transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS41L60CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS41L60CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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