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STPS41L60CG

STMicroelectronics

STPS41L60CG by STMicroelectronics

STPS41L60CG by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.58V, supports up to 20A output current, and has a peak reverse voltage of 60V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

$1.125

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,802 parts In-Stock

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Chip Stock

USA . 7,300 parts In-Stock

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7,300

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Digiode

USA . 3,468 parts In-Stock

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3,468

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Anansix

USA . 1,576 parts In-Stock

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1,576

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Bristol Electronics

USA . 100 parts In-Stock

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$1.125

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100

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$1.125

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Microfarads

USA . 96 parts In-Stock

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96

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 900 parts In-Stock

1+ parts

$0.148

100+ parts

-

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$0.133

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900

$0.148

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$0.133

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MKK Technologies

India . 383 parts In-Stock

1+ parts

$0.279

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383

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DigiPath Technology Company

USA . 383 parts In-Stock

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$0.279

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383

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AZTECH Wire

Italy . 884 parts In-Stock

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$14.200

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884

$14.200

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QUARKTWIN TECHNOLOGY LTD

USA . 6,846 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 2,841 parts In-Stock

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Parana Technologies

USA . 88 parts In-Stock

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$0.177

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88

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Overview

Unlock unparalleled performance with the STPS41L60CG from STMicroelectronics, a leader in high-quality electronic components. Designed for power applications, this robust Schottky rectifier diode ensures efficiency and reliability, enhancing your circuits while minimizing energy loss. Its compact surface-mount design is perfect for space-constrained projects. Trust in ST's legacy of innovation to elevate your designs and achieve exceptional operational advantages!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the diode reliable in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration is versatile and simplifies circuit design, enabling easier integration into power applications.

Surface Mount: YES

Surface mount technology allows for more compact designs and automated assembly, which enhances production efficiency.

Package Shape: RECTANGULAR

Rectangular package shapes optimize PCB space usage, making them ideal for high-density circuits.

No. of Terminals: 2

Having only two terminals simplifies installation and reduces potential points of failure in connections.

Package Style (Meter): SMALL OUTLINE

A small outline package minimizes the footprint on the PCB, allowing more components to be placed in limited spaces.

Application: POWER

Designed specifically for power applications, this diode efficiently handles high-load scenarios, making it suitable for various power management tasks.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

The single terminal position allows for straightforward routing on the PCB, simplifying the design process.

Case Connection: CATHODE

The cathode case connection aligns with common circuit designs, making integration easier for engineers.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, essential for many power supply circuits.

Maximum Forward Voltage (VF): 0.58 V

This low forward voltage drop indicates higher efficiency and lower energy loss during operation, improving overall system performance.

Maximum Output Current: 20 A

Handling a maximum output current of 20 A makes this diode suitable for high-power applications, ensuring reliability under load.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, making it ideal for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide a robust and stable connection, ensuring good mechanical strength and solderability.

No. of Elements: 2

Having two elements allows for greater current handling capacity, making it suitable for applications requiring higher power.

Maximum Repetitive Peak Reverse Voltage: 60 V

A maximum repetitive peak reverse voltage of 60 V ensures durability and reliability in demanding electrical environments.

Maximum Non Repetitive Peak Forward Current: 220 A

This high peak forward current capability allows the diode to handle surge conditions effectively, providing additional resilience in applications.

Diode Element Material: SILICON

Silicon is a widely-used semiconductor material that provides excellent thermal and electrical characteristics, making it ideal for reliable diode performance.

Technical Specifications

Diodes & Rectifiers STPS41L60CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS41L60CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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