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STPS40SM60CT

STMicroelectronics

STPS40SM60CT by STMicroelectronics

STMicroelectronics' STPS40SM60CT is a Schottky rectifier diode with 2 elements, common cathode config, and max output current of 20A. It has a max repetitive peak reverse voltage of 60V and is ideal for efficiency applications requiring low forward voltage drop (0.625V) and high non-repetitive peak forward current (400A).

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,600 parts In-Stock

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9,600

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Digiode

USA . 3,214 parts In-Stock

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3,214

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Anansix

USA . 2,664 parts In-Stock

1+ parts

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2,664

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 655 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

$0.134

10k+ parts

-

655

$0.149

-

$0.134

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.223

100+ parts

$0.203

1k+ parts

$0.183

10k+ parts

-

2,500

$0.223

$0.203

$0.183

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MKK Technologies

India . 165 parts In-Stock

1+ parts

$0.280

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165

$0.280

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DigiPath Technology Company

USA . 165 parts In-Stock

1+ parts

$0.280

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165

$0.280

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AZTECH Wire

Italy . 686 parts In-Stock

1+ parts

$20.260

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686

$20.260

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Corphita

USA . 4,109 parts In-Stock

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4,109

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Parana Technologies

USA . 533 parts In-Stock

1+ parts

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$0.178

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533

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$0.178

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Overview

Experience the superior quality and innovative design of STMicroelectronics with the STPS40SM60CT diode rectifier. This product offers exceptional efficiency and performance, making it ideal for a wide range of applications. With a maximum output current of 20A and a maximum repetitive peak reverse voltage of 60V, this Schottky technology diode is a reliable choice for your electronic projects. Trust in STMicroelectronics to provide you with the cutting-edge components you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a long lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into electronic circuits that require common cathode configuration.

Maximum Reverse Current: 90 uA

Ensures efficient operation and minimal leakage current.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement in electronic devices.

No. of Terminals: 3

Provides flexibility for connection in various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting in electronic equipment for reliable performance.

Application: EFFICIENCY

Designed for high efficiency applications where minimal power loss is crucial.

Terminal Finish: MATTE TIN

Ensures good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies installation and wiring in electronic circuits.

Case Connection: CATHODE

Facilitates proper orientation and connection for effective circuit operation.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC efficiently in various electronic applications.

Maximum Forward Voltage (VF): 0.625 V

Provides low voltage drop for efficient power conversion.

Maximum Output Current: 20 A

Capable of handling high current loads for robust performance.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop for high efficiency operation.

Terminal Form: THROUGH-HOLE

Enables easy and secure through-hole mounting on PCBs for reliable connection.

No. of Elements: 2

Dual diode elements provide redundancy and reliability in critical applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

Suitable for applications requiring high reverse voltage protection.

Maximum Non Repetitive Peak Forward Current: 400 A

Capable of handling high transient currents for robust performance in demanding conditions.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and stability in a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS40SM60CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.625 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

90 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS40SM60CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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