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STPS40SM100CG

STMicroelectronics

STPS40SM100CG by STMicroelectronics

STPS40SM100CG by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max forward voltage of 0.58V, supports up to 20A output current, and has a peak reverse voltage of 100V. Ideal for compact surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,948 parts In-Stock

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4,948

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Anansix

USA . 1,901 parts In-Stock

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1,901

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Digiode

USA . 766 parts In-Stock

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766

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,280 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

$0.082

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1,280

$0.091

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$0.082

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MKK Technologies

India . 1,546 parts In-Stock

1+ parts

$0.171

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1,546

$0.171

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DigiPath Technology Company

USA . 1,546 parts In-Stock

1+ parts

$0.171

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1,546

$0.171

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AZTECH Wire

Italy . 803 parts In-Stock

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$18.520

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803

$18.520

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Corphita

USA . 2,092 parts In-Stock

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2,092

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Parana Technologies

USA . 1,139 parts In-Stock

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$0.109

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1,139

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$0.109

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Overview

Unlock unparalleled efficiency with the STPS40SM100CG from STMicroelectronics, a leader in innovation and reliability. Engineered as a high-performance Schottky rectifier diode, this component excels in applications requiring swift response and minimal power loss. Its compact design ensures easy integration, making it ideal for power management in various electronic devices. Trust STMicroelectronics for quality that enhances performance and delivers exceptional value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and resistance to environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easy integration in circuits where multiple diodes share a common output, simplifying circuit design.

Surface Mount: YES

Being a surface mount device (SMD) enables efficient use of PCB space and improves assembly efficiency in modern electronics.

Package Shape: RECTANGULAR

The rectangular shape optimizes layout flexibility on the circuit board, facilitating better arrangement and thermal management.

No. of Terminals: 2

With only two terminals, this diode simplifies connectivity and reduces the chances of miswiring in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, making it ideal for space-constrained applications in consumer electronics.

Application: EFFICIENCY

Designed for high efficiency, this diode minimizes power losses, making it suitable for applications that prioritize energy conservation.

Terminal Position: SINGLE

The single terminal position further streamlines integration into circuits, enhancing reliability and ease of use.

Case Connection: CATHODE

A cathode case connection provides a straightforward reference point for integration, ensuring correct polarity in circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.58 V

With a low maximum forward voltage, this diode minimizes voltage drop in the circuit, enhancing overall system efficiency.

Maximum Output Current: 20 A

Capable of handling a maximum output current of 20 A, this diode is well-suited for high-power applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode provides faster switching speeds and lower forward voltage, improving performance in fast circuits.

Terminal Form: GULL WING

The gull wing terminal form ensures excellent solderability and mechanical stability in assembly, promoting long-lasting connections.

No. of Elements: 2

Featuring two elements, this diode can effectively handle higher currents and provide redundancy in circuit applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage rating allows for flexibility in various applications, ensuring reliability under voltage stress.

Maximum Non Repetitive Peak Forward Current: 530 A

The impressive non-repetitive peak forward current capacity makes this diode suitable for handling transient surges in power applications.

Diode Element Material: SILICON

Silicon as the diode element material provides robust performance and reliable operation in a wide range of temperatures.

Technical Specifications

Diodes & Rectifiers STPS40SM100CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

530 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS40SM100CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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