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STPS4030CT

STMicroelectronics

STPS4030CT by STMicroelectronics

STPS4030CT by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.4 V and supports up to 20 A output current. It features a common cathode configuration in a flange mount package, ideal for efficient power applications. With a peak reverse voltage of 30 V, it ensures reliable performance in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,617 parts In-Stock

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7,617

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Digiode

USA . 683 parts In-Stock

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683

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Anansix

USA . 574 parts In-Stock

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574

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Microfarads

USA . 96 parts In-Stock

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96

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IDEA Electronic Components Group

UK . 276 parts In-Stock

1+ parts

$0.083

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$0.075

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276

$0.083

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$0.075

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MKK Technologies

India . 2,282 parts In-Stock

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$0.156

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$0.156

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DigiPath Technology Company

USA . 2,282 parts In-Stock

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$0.156

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$0.156

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Andel Nordic

Denmark . 2,099 parts In-Stock

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$1.610

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$1.545

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$1.545

2,099

$1.610

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$1.545

$1.545

AZTECH Wire

Italy . 529 parts In-Stock

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$9.260

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529

$9.260

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Component Stockers USA

USA . 415 parts In-Stock

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$99.990

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415

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Kepictronics

USA . 25,000 parts In-Stock

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RC Electronics

USA . 13,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,949 parts In-Stock

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Metaverse IC Inc.

Canada . 4,383 parts In-Stock

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Corphita

USA . 2,706 parts In-Stock

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Parana Technologies

USA . 1,278 parts In-Stock

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$0.099

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$0.099

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Authorized Procurement Solutions

USA . 600 parts In-Stock

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600

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Perfect Parts

USA . 112 parts In-Stock

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112

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GreenTree Electronics

Israel . 100 parts In-Stock

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Overview

Unlock unparalleled performance with the STPS4030CT Schottky rectifier diode by STMicroelectronics. Renowned for their commitment to innovation and quality, STMicroelectronics delivers a reliable solution that enhances efficiency in various applications, from power supplies to industrial equipment. With its robust design and superior thermal characteristics, this diode ensures reduced energy loss and increased durability, empowering your projects with unmatched reliability and cost-effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent durability and resistance to environmental factors, making the diode reliable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies the circuit design and allows for efficient thermal management in applications requiring parallel diode setups.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and space-efficient design, making it ideal for applications with limited board space.

No. of Terminals: 3

Having three terminals enables versatile connections, facilitating easy integration into various circuit architectures.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances the stability of the diode during operation, ensuring reliable performance in demanding conditions.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes losses, making it an excellent choice for high-performance power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures excellent solderability and corrosion resistance, enhancing the longevity of connections in applications.

Terminal Position: SINGLE

A single terminal position simplifies installation and wiring, improving assembly efficiency in circuit design.

Case Connection: CATHODE

With cathode connection, this diode guarantees a clear reference for circuit design, making it easier to implement in various applications.

Diode Type: RECTIFIER DIODE

This rectifier diode is designed to handle high current and reverse voltage, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 0.4 V

A low maximum forward voltage drop contributes to higher efficiency in power circuits, reducing energy losses during operation.

Maximum Output Current: 20 A

With a high output current rating, this diode can handle significant loads, making it suitable for power-intensive applications.

Technology: SCHOTTKY

The Schottky technology provides fast switching speeds and low reverse leakage current, enhancing performance in high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical support and ease of soldering, making it a reliable choice for various PCB designs.

No. of Elements: 2

Two elements provide increased efficiency and improved power handling capabilities, ideal for applications where multiple diodes can be utilized.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum repetitive peak reverse voltage of 30 V allows for use in a wide range of power applications without risk of breakdown.

Maximum Non Repetitive Peak Forward Current: 220 A

High non-repetitive peak forward current capability makes this diode suitable for demanding applications such as pulse load circuits.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures excellent thermal performance and reliability in a variety of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS4030CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.4 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS4030CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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