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STPS3150AFN

STMicroelectronics

STPS3150AFN by STMicroelectronics

STPS3150AFN by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max reverse voltage of 150V, forward current of 3A, and operates up to 175 °C. Ideal for power management in compact electronic devices.

Median Price

$0.296

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 893 parts In-Stock

1+ parts

-

100+ parts

$0.203

1k+ parts

$0.151

10k+ parts

-

893

-

$0.203

$0.151

-

Element14

Singapore . 893 parts In-Stock

1+ parts

-

100+ parts

$0.388

1k+ parts

$0.240

10k+ parts

$0.219

893

-

$0.388

$0.240

$0.219

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,984 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,984

-

-

-

-

Digiode

USA . 4,363 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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4,363

-

-

-

-

Anansix

USA . 1,866 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

1,866

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,169 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

$0.089

10k+ parts

-

2,169

$0.098

-

$0.089

-

MKK Technologies

India . 1,705 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,705

$0.185

-

-

-

DigiPath Technology Company

USA . 1,705 parts In-Stock

1+ parts

$0.185

100+ parts

-

1k+ parts

-

10k+ parts

-

1,705

$0.185

-

-

-

AZTECH Wire

Italy . 1,043 parts In-Stock

1+ parts

$13.040

100+ parts

-

1k+ parts

-

10k+ parts

-

1,043

$13.040

-

-

-

Continental Prestige Electronics

USA . 9,333 parts In-Stock

1+ parts

-

100+ parts

$0.226

1k+ parts

$0.181

10k+ parts

-

9,333

-

$0.226

$0.181

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,000

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-

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Alle Elektronik GmbH

Germany . 4,835 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,835

-

-

-

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Corphita

USA . 3,262 parts In-Stock

1+ parts

-

100+ parts

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3,262

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-

-

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Parana Technologies

USA . 129 parts In-Stock

1+ parts

-

100+ parts

$0.118

1k+ parts

-

10k+ parts

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129

-

$0.118

-

-

Overview

Unlock exceptional efficiency with the STPS3150AFN diode from STMicroelectronics, a leader in semiconductor innovation. This high-performance rectifier delivers unparalleled reliability and durability, ideal for demanding applications. With its advanced Schottky technology, it minimizes energy loss, ensuring your designs operate smoothly even under extreme conditions. Invest in quality and experience seamless integration, superior performance, and long-lasting value for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Utilizing plastic/epoxy material provides durability and enhances resistance to environmental factors, making the diode reliable in various applications.

Config: SINGLE

A single configuration makes this diode compact and suitable for applications with space constraints.

Surface Mount: YES

Surface mount capability allows for easier assembly on PCB, improving manufacturing efficiency and reducing production costs.

Maximum Reverse Current: 2 uA

With a low reverse current, this diode minimizes energy loss, thus improving efficiency in circuits.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, which is ideal for compact electronic designs.

Reverse Test Voltage: 150 V

A high reverse test voltage capability enhances reliability in high-voltage applications, safeguarding against breakdown.

No. of Terminals: 2

Having two terminals simplifies integration into circuits, making it easier to design and implement in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style facilitates dense circuit layouts, beneficial for modern electronic devices with limited space.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for power-sensitive applications, contributing to energy savings and improved performance.

Maximum Operating Temperature: 175 °C

A high operating temperature range ensures reliability in extreme conditions, extending the lifespan of the component in demanding environments.

Terminal Position: DUAL

Dual terminal positioning offers greater flexibility in layout design, making it compatible with various circuit configurations.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it’s optimized for converting AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.89 V

A low forward voltage drop enhances efficiency in power applications, resulting in less heat generation and improved thermal performance.

Maximum Output Current: 3 A

Supporting a maximum output current of 3 A makes this diode suitable for various mid-range current applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode features fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal forms facilitate a secure and stable surface for soldering, enhancing the reliability of the connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 150 V

Capable of handling 150 V peak reverse voltage, making it reliable in high voltage applications while avoiding breakdown or failure.

Maximum Non-Repetitive Peak Forward Current: 75 A

A high non-repetitive peak forward current allows for short bursts of high current, making it perfect for applications that require surges.

Diode Element Material: SILICON

Using silicon as the diode element material provides excellent electrical characteristics, ensuring good performance and thermal stability.

Technical Specifications

Diodes & Rectifiers STPS3150AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Current:

2 uA

Reverse Test Voltage:

150 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS3150AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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