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STPS3150

STMicroelectronics

STPS3150 by STMicroelectronics

STPS3150 by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max output current of 3 A, a forward voltage drop of 0.67 V, and operates at temperatures up to 175 °C. Ideal for power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,753 parts In-Stock

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6,753

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Digiode

USA . 4,803 parts In-Stock

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4,803

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ACDS - Activité Composants Distribution Service

France . 600 parts In-Stock

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600

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Anansix

USA . 112 parts In-Stock

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112

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

$0.016

10k+ parts

-

1,481

$0.017

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$0.016

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MKK Technologies

India . 1,933 parts In-Stock

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$0.033

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1,933

$0.033

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DigiPath Technology Company

USA . 1,933 parts In-Stock

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$0.033

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1,933

$0.033

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AZTECH Wire

Italy . 110 parts In-Stock

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$11.750

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110

$11.750

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Component Stockers USA

USA . 742 parts In-Stock

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$99.990

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742

$99.990

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RC Electronics

USA . 70,000 parts In-Stock

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70,000

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A-Z Elektronik GmbH

Germany . 15,000 parts In-Stock

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Corphita

USA . 3,046 parts In-Stock

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Infinite Electronics LLP (Excess)

. 2,323 parts In-Stock

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Perfect Parts

USA . 1,344 parts In-Stock

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iodParts Technologies Inc.

India . 600 parts In-Stock

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600

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Cyclops Electronics Ltd (Excess)

UK . 600 parts In-Stock

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600

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Parana Technologies

USA . 431 parts In-Stock

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$0.021

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431

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$0.021

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Overview

Elevate your designs with the STPS3150 from STMicroelectronics, a premier choice in rectifier diodes that guarantees exceptional efficiency and reliability. Crafted with precision, this Schottky diode excels in high-temperature environments, ensuring consistent performance across diverse applications. Benefit from its robust construction and proven technology, delivering outstanding value and peace of mind for your projects. Choose the STPS3150 for superior quality and unmatched performance in every circuit!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and resistance to environmental factors, making the diode reliable for various applications.

Config: SINGLE

A single configuration simplifies circuit design while maintaining effective performance, making it suitable for compact applications.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation and easy integration into different circuit layouts.

No. of Terminals: 2

With only two terminals, this diode simplifies connections and reduces potential for wiring errors in electronic designs.

Package Style (Meter): LONG FORM

The long form package style allows for better flexibility in circuit arrangements and facilitates handling during assembly.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes power loss, making it an excellent choice for energy-saving applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance even in extreme conditions, enhancing durability and lifespan.

Terminal Finish: MATTE TIN

The matte tin finish offers excellent solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: AXIAL

Axial terminal positioning provides easy mounting and integration into circuits, facilitating better thermal management.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits, making it suitable for sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.67 V

A low forward voltage drop indicates greater efficiency and reduced heat generation during operation, which is advantageous for power savings.

Maximum Output Current: 3 A

Capable of handling up to 3 A of output current, this diode is suitable for a wide range of applications requiring substantial current.

Technology: SCHOTTKY

Being a Schottky diode allows for fast switching speeds and low forward voltage drop, enhancing overall circuit efficiency.

Terminal Form: WIRE

Wire terminal forms provide flexibility in connecting the diode into a circuit and are often preferred for space-constrained designs.

Maximum Repetitive Peak Reverse Voltage: 150 V

The capability to withstand up to 150 V of reverse voltage enhances the diode's versatility across varied applications.

Maximum Non-Repetitive Peak Forward Current: 150 A

Able to handle a peak forward current of 150 A signifies robustness and high performance under transient conditions.

Diode Element Material: SILICON

Silicon material is known for its reliability and efficiency in semiconductor devices, ensuring consistent performance.

Technical Specifications

Diodes & Rectifiers STPS3150 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS3150 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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