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STPS30SM80CG-TR

STMicroelectronics

STPS30SM80CG-TR by STMicroelectronics

STMicroelectronics' STPS30SM80CG-TR is a Schottky rectifier diode with 80V reverse voltage and 15A output current. Its common cathode configuration and small outline package make it suitable for high-efficiency applications. The diode has a max forward voltage of 0.555V, making it ideal for power efficiency needs.

Median Price

$1.275

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 397 parts In-Stock

1+ parts

$0.910

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-

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397

$0.910

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Chip1Stop

Japan . 460 parts In-Stock

1+ parts

$1.640

100+ parts

-

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460

$1.640

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Verical

USA . 397 parts In-Stock

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397

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Distributors (In-Stock)

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Digiode

USA . 4,232 parts In-Stock

1+ parts

$0.866

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4,232

$0.866

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Vyrian

USA . 11,835 parts In-Stock

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11,835

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Anansix

USA . 648 parts In-Stock

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648

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,236 parts In-Stock

1+ parts

$0.017

100+ parts

-

1k+ parts

$0.015

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2,236

$0.017

-

$0.015

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MKK Technologies

India . 399 parts In-Stock

1+ parts

$0.031

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399

$0.031

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DigiPath Technology Company

USA . 399 parts In-Stock

1+ parts

$0.031

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399

$0.031

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Corphita

USA . 1,084 parts In-Stock

1+ parts

$0.821

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1,084

$0.821

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Ampacity Inc.

Singapore . 345 parts In-Stock

1+ parts

$1.690

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345

$1.690

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AZTECH Wire

Italy . 595 parts In-Stock

1+ parts

$15.860

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595

$15.860

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QUARKTWIN TECHNOLOGY LTD

USA . 25,324 parts In-Stock

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25,324

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 1,084 parts In-Stock

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1,084

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Parana Technologies

USA . 561 parts In-Stock

1+ parts

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$0.020

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561

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$0.020

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Overview

Discover the STPS30SM80CG-TR by STMicroelectronics, a high-quality diode and rectifier designed for efficiency applications. With a common cathode configuration and Schottky technology, this product offers superior performance and reliability. Manufactured by STMicroelectronics, a trusted leader in the industry, customers can trust in the value and benefits of this component. Experience the advantages of fast switching speeds, low forward voltage, and high output currents. Upgrade your projects with the STPS30SM80CG-TR and unlock new possibilities in power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the diodes, ensuring reliable performance and durability.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit design and connection, while 2 elements provide higher efficiency and current handling capabilities.

Surface Mount: YES

Surface mount design enables easy and efficient PCB assembly, reducing overall manufacturing costs and improving space utilization.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-efficient placement on the PCB, maximizing the use of available board space.

Maximum Forward Voltage (VF): 0.555 V

Low forward voltage drop of 0.555 V ensures minimal power loss and high efficiency in the circuit, making it suitable for energy-efficient applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop, leading to improved performance and reduced power dissipation.

Maximum Repetitive Peak Reverse Voltage: 80 V

High reverse voltage rating of 80 V provides protection against voltage spikes and surges, making the diode suitable for rugged and demanding applications.

Technical Specifications

Diodes & Rectifiers STPS30SM80CG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.555 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS30SM80CG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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