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STPS30SM60ST

STMicroelectronics

STPS30SM60ST by STMicroelectronics

STPS30SM60ST by STMicroelectronics is a Schottky rectifier diode with 30A output current and 60V peak reverse voltage. It has a max forward voltage of 0.615V and operates at up to 150 °C. Ideal for efficiency applications, it features a single terminal position in a rectangular package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,765 parts In-Stock

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2,765

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Anansix

USA . 1,785 parts In-Stock

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1,785

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Digiode

USA . 625 parts In-Stock

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625

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 114 parts In-Stock

1+ parts

$0.016

100+ parts

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$0.014

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114

$0.016

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$0.014

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MKK Technologies

India . 2,176 parts In-Stock

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$0.029

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2,176

$0.029

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DigiPath Technology Company

USA . 2,176 parts In-Stock

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$0.029

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2,176

$0.029

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AZTECH Wire

Italy . 199 parts In-Stock

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$15.510

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199

$15.510

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Corphita

USA . 3,428 parts In-Stock

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3,428

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Parana Technologies

USA . 2,078 parts In-Stock

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$0.019

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2,078

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$0.019

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Overview

Enhance the efficiency of your electronic devices with the STPS30SM60ST by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality in their diodes & rectifiers. Whether you're looking to improve power management or enhance overall performance, this Schottky rectifier diode offers a maximum output current of 30A and a maximum repetitive peak reverse voltage of 60V. With its single package style and through-hole terminal form, the STPS30SM60ST is perfect for a wide range of applications where reliability and high performance are key. Upgrade your electronics today with this innovative solution from STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and insulation, ensuring long-lasting performance and safety.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Maximum Reverse Current: 135 uA

Low reverse current allows for efficient operation and minimizes power loss.

Package Shape: RECTANGULAR

Rectangular shape is easy to mount and fits well within circuit layouts.

No. of Terminals: 3

Three terminals provide flexibility in connection options.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers secure installation and stability.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where energy conservation is important.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in various conditions.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation.

Case Connection: CATHODE

Cathode case connection ensures proper polarity and protects the diode from reverse voltage.

Diode Type: RECTIFIER DIODE

Rectifier diode converts AC to DC efficiently and is suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.615 V

Low forward voltage drop minimizes power loss and improves overall efficiency.

Maximum Output Current: 30 A

High output current capability allows for handling substantial load without issues.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections in circuit boards.

Maximum Repetitive Peak Reverse Voltage: 60 V

High reverse voltage rating ensures protection against voltage spikes and transients.

Maximum Non Repetitive Peak Forward Current: 600 A

High peak forward current capability allows for handling surge currents and overloads.

Diode Element Material: SILICON

Silicon diode element material provides stable and consistent performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers STPS30SM60ST attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.615 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

600 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

135 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS30SM60ST Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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