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STPS30SM120STN

STMicroelectronics

STPS30SM120STN by STMicroelectronics

STPS30SM120STN by STMicroelectronics is a Schottky rectifier diode with 120V reverse voltage and 240A peak forward current. It has a max operating temperature of 150 °C, ideal for efficiency applications. The package style is flange mount with a plastic/epoxy body material.

Median Price

$2.641

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,295 parts In-Stock

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$2.641

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1,295

$2.641

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Vyrian

USA . 11,449 parts In-Stock

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11,449

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Anansix

USA . 2,644 parts In-Stock

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2,644

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Cyclops Electronics Ltd

UK . 290 parts In-Stock

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290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 225 parts In-Stock

1+ parts

$0.021

100+ parts

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$0.019

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225

$0.021

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$0.019

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MKK Technologies

India . 29 parts In-Stock

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$0.040

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29

$0.040

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DigiPath Technology Company

USA . 29 parts In-Stock

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$0.040

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29

$0.040

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.163

100+ parts

$0.148

1k+ parts

$0.134

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2,000

$0.163

$0.148

$0.134

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Corphita

USA . 2,911 parts In-Stock

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$2.502

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2,911

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Microchip USA

USA . 9,205 parts In-Stock

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9,205

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Parana Technologies

USA . 1,396 parts In-Stock

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$0.025

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1,396

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$0.025

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Perfect Parts

USA . 1,091 parts In-Stock

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1,091

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Overview

Experience the next level of efficiency with the STPS30SM120STN by STMicroelectronics. This high-quality Schottky rectifier diode offers superior performance and reliability for a wide range of applications. With a maximum repetitive peak reverse voltage of 120V and maximum non-repetitive peak forward current of 240A, this diode ensures optimal operation in various scenarios. Trust in STMicroelectronics' reputation for excellence and unlock the value and benefits that this product can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good protection and insulation for the diode, making it durable and reliable.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to use.

Maximum Reverse Current: 275 uA

The low maximum reverse current indicates low leakage and improved efficiency of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement in various electronic devices.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting on circuit boards or other surfaces.

Application: EFFICIENCY

Designed for efficiency, this diode can help improve the overall performance of the circuit or device it is used in.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures and operate reliably in various environments.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation and connection process of the diode.

Case Connection: CATHODE

The cathode case connection ensures proper polarity and orientation of the diode in the circuit.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.95 V

The low forward voltage drop of 0.95V minimizes power loss and heat generation, improving efficiency.

Technology: SCHOTTKY

The Schottky technology used in this diode results in faster switching speeds and lower forward voltage drops compared to standard silicon diodes.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto circuit boards or other components.

Maximum Repetitive Peak Reverse Voltage: 120 V

With a high maximum repetitive peak reverse voltage, this diode can handle voltage spikes and surges effectively.

Maximum Non Repetitive Peak Forward Current: 240 A

The high maximum non-repetitive peak forward current rating makes this diode suitable for applications that require high surge currents.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures reliability, stability, and high performance in various applications.

Technical Specifications

Diodes & Rectifiers STPS30SM120STN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

275 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS30SM120STN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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