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STPS30SM100SFP

STMicroelectronics

STPS30SM100SFP by STMicroelectronics

STPS30SM100SFP by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max output current of 30 A, a peak reverse voltage of 100 V, and operates at up to 150 °C. Its flange mount design ensures reliable performance in various circuits.

Median Price

$3.460

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 6 parts In-Stock

1+ parts

$3.460

100+ parts

$2.600

1k+ parts

$2.250

10k+ parts

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6

$3.460

$2.600

$2.250

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Vyrian

USA . 8,040 parts In-Stock

1+ parts

-

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8,040

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Digiode

USA . 4,195 parts In-Stock

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4,195

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Anansix

USA . 2,896 parts In-Stock

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2,896

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,214 parts In-Stock

1+ parts

$0.012

100+ parts

-

1k+ parts

$0.011

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2,214

$0.012

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$0.011

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MKK Technologies

India . 537 parts In-Stock

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$0.022

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537

$0.022

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DigiPath Technology Company

USA . 537 parts In-Stock

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$0.022

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537

$0.022

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AZTECH Wire

Italy . 372 parts In-Stock

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$12.680

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372

$12.680

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Alle Elektronik GmbH

Germany . 4,211 parts In-Stock

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4,211

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Parana Technologies

USA . 1,712 parts In-Stock

1+ parts

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$0.014

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1,712

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$0.014

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Infinite Electronics LLP (Excess)

. 1,007 parts In-Stock

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Corphita

USA . 507 parts In-Stock

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507

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Perfect Parts

USA . 267 parts In-Stock

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267

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Overview

Unlock unparalleled reliability and efficiency with the STPS30SM100SFP Schottky rectifier from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers this high-performance diode designed for demanding applications, ensuring optimal power management with minimal loss. With a robust design that withstands extreme temperatures, this diode is perfect for power supplies, automotive systems, and industrial circuits, offering customers unmatched durability and performance. Elevate your projects with ST's trusted excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Config: SINGLE

A single configuration allows for simplified circuit designs, reducing complexity and potential points of failure.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on PCBs, making it easier to integrate into compact designs.

No. of Terminals: 3

Three terminals provide versatility in circuit connections, allowing for more flexible circuit design options.

Package Style (Meter): FLANGE MOUNT

Flange mount package style ensures easy installation and stable mounting, which is crucial for maintaining operational integrity in various applications.

Application: EFFICIENCY

Designed for efficiency, this diode performs well in applications aiming to minimize losses and improve power management.

Maximum Operating Temperature: 150 °C

With a max operating temperature of 150 °C, this diode can function in high-temperature environments, enhancing reliability in demanding applications.

Terminal Position: SINGLE

The single terminal position simplifies the design and assembly of circuits while ensuring reliable connections.

Case Connection: ISOLATED

An isolated case connection helps prevent interference from other circuit elements, ensuring stable performance and safety.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed for efficient current direction control, making it ideal for converting AC to DC.

Maximum Forward Voltage (VF): 0.56 V

The low maximum forward voltage ensures minimal loss during operation, contributing to overall efficiency in power management.

Maximum Output Current: 30 A

With a maximum output current of 30 A, this diode can handle substantial power levels, making it suitable for high-current applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode provides faster switching speeds and lower forward voltage drop, boosting efficiency in high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for secure mounting and reliable electrical connections, making it easier for users to implement in circuits.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a peak reverse voltage rating of 100 V, this component is capable of handling substantial voltage spikes, enhancing circuit robustness.

Maximum Non Repetitive Peak Forward Current: 530 A

The ability to handle a non-repetitive forward current of 530 A signifies exceptional reliability during transient conditions, making this diode suitable for surge-prone applications.

Diode Element Material: SILICON

Silicon as the diode element material ensures good thermal stability and performance characteristics, making it a common and effective choice in diode applications.

Technical Specifications

Diodes & Rectifiers STPS30SM100SFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

530 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS30SM100SFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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