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STPS30M60D

STMicroelectronics

STPS30M60D by STMicroelectronics

STMicroelectronics' STPS30M60D is a Schottky rectifier diode with 60V peak reverse voltage, 30A output current, and 0.605V forward voltage. It is used in applications requiring high efficiency and low power loss due to its Schottky technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,029 parts In-Stock

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10,029

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Digiode

USA . 3,234 parts In-Stock

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3,234

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Anansix

USA . 1,528 parts In-Stock

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1,528

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,655 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

$0.055

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1,655

$0.062

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$0.055

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MKK Technologies

India . 799 parts In-Stock

1+ parts

$0.116

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799

$0.116

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DigiPath Technology Company

USA . 799 parts In-Stock

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$0.116

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799

$0.116

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AZTECH Wire

Italy . 1,103 parts In-Stock

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$21.500

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1,103

$21.500

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Component Stockers USA

USA . 778 parts In-Stock

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$99.990

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778

$99.990

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Corphita

USA . 4,004 parts In-Stock

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4,004

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Perfect Parts

USA . 812 parts In-Stock

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Parana Technologies

USA . 576 parts In-Stock

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$0.074

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576

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$0.074

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Overview

The STPS30M60D by STMicroelectronics is a high-quality Schottky rectifier diode that offers reliable performance and efficiency in various applications. With a maximum output current of 30 A and a maximum repetitive peak reverse voltage of 60 V, this diode is ideal for power supply designs, battery charging circuits, and motor control systems. STMicroelectronics, known for its cutting-edge technology and superior manufacturing processes, ensures that the STPS30M60D delivers exceptional value and benefits to customers seeking reliable and high-performance diodes for their projects. Trust STMicroelectronics for quality components that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection and insulation for the diode, increasing its durability and reliability in various operating conditions.

Configuration: SINGLE

Simplified design and easy installation, making it ideal for applications where a single diode is sufficient.

Maximum Reverse Current: 165 uA

Low reverse current ensures minimal power loss and improved efficiency in the circuit.

Package Shape: RECTANGULAR

Compact and space-saving design, suitable for applications with limited space constraints.

No. of Terminals: 2

Straightforward connection and integration within the circuit, reducing complexity and enhancing reliability.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and efficient heat dissipation, enhancing the overall performance and longevity of the diode.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring stable operation in demanding conditions.

Terminal Position: SINGLE

Simplified wiring and connection process, reducing the chances of errors or malfunctions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring efficient conversion of alternating current (AC) to direct current (DC).

Maximum Forward Voltage (VF): 0.605 V

Low forward voltage drop results in minimal power dissipation and improved energy efficiency.

Maximum Output Current: 30 A

Capable of handling high current loads, making it suitable for power electronics applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for high frequency and high power applications.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection on the PCB, ensuring reliable electrical contact.

Maximum Repetitive Peak Reverse Voltage: 60 V

Provides a high voltage rating, suitable for applications where reverse voltage protection is critical.

Maximum Non Repetitive Peak Forward Current: 450 A

Capable of handling brief surges in current without damage, making it suitable for demanding applications.

Diode Element Material: SILICON

Silicon diodes offer stable performance and high reliability, ideal for a wide range of applications requiring precision rectification.

Technical Specifications

Diodes & Rectifiers STPS30M60D attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.605 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

Maximum Non Repetitive Peak Forward Current:

450 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

165 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS30M60D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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