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STPS30M120STN

STMicroelectronics

STPS30M120STN by STMicroelectronics

STMicroelectronics' STPS30M120STN is a single Schottky rectifier diode with 120V reverse voltage and 0.9V forward voltage. It has a max operating temperature of 150 °C, ideal for efficiency applications in electronics. The diode's package style is flange mount with a plastic/epoxy body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,029 parts In-Stock

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12,029

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Digiode

USA . 2,482 parts In-Stock

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2,482

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Anansix

USA . 520 parts In-Stock

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520

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Distributors (Availability)

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.117

100+ parts

$0.106

1k+ parts

$0.096

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-

100

$0.117

$0.106

$0.096

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IDEA Electronic Components Group

UK . 1,252 parts In-Stock

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$0.140

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-

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$0.126

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$0.140

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$0.126

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MKK Technologies

India . 2,174 parts In-Stock

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$0.263

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2,174

$0.263

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DigiPath Technology Company

USA . 2,174 parts In-Stock

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$0.263

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2,174

$0.263

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AZTECH Wire

Italy . 1,009 parts In-Stock

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$21.930

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1,009

$21.930

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Corphita

USA . 2,620 parts In-Stock

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Parana Technologies

USA . 1,628 parts In-Stock

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$0.167

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1,628

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$0.167

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Perfect Parts

USA . 1,056 parts In-Stock

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Kepictronics

USA . 95 parts In-Stock

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Overview

Enhance the efficiency of your electronic devices with the STPS30M120STN by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in their products. This Schottky rectifier diode is ideal for various applications that require high performance and low power consumption. With a maximum forward voltage of only 0.9V, this diode offers exceptional value by minimizing energy loss and maximizing efficiency. Upgrade your electronics with the STPS30M120STN and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring its durability and reliability.

Config: SINGLE

Simplifies the circuit design as only one diode is needed for the application.

Maximum Reverse Current: 345 uA

Low reverse current minimizes power loss and improves efficiency in the circuit.

Package Shape: RECTANGULAR

Facilitates easy mounting and soldering on the circuit board.

No. of Terminals: 3

Provides necessary connections for the diode in the circuit.

Package Style (Meter): FLANGE MOUNT

Allows for secure and easy mounting in the application.

Application: EFFICIENCY

Designed to improve efficiency in the specified application.

Maximum Operating Temperature: 150 °C

Can operate at higher temperatures without any performance degradation.

Terminal Position: SINGLE

Simplifies the connection process in the circuit design.

Case Connection: CATHODE

Defines the cathode connection for appropriate circuit design.

Diode Type: RECTIFIER DIODE

Designed for rectification in AC to DC conversion applications.

Maximum Forward Voltage (VF): 0.9 V

Low forward voltage drop ensures minimal power loss in the circuit.

Technology: SCHOTTKY

Schottky diodes offer faster switching speeds and lower voltage drop compared to standard diodes.

Terminal Form: THROUGH-HOLE

Facilitates easy installation on the circuit board through holes for soldering.

Maximum Repetitive Peak Reverse Voltage: 120 V

Can withstand up to 120V in reverse bias, suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 260 A

Capable of handling high transient currents without damage.

Diode Element Material: SILICON

Silicon diodes are widely used for their high temperature capability and low leakage current.

Technical Specifications

Diodes & Rectifiers STPS30M120STN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

260 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

345 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

STPS30M120STN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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