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STPS30L30CR

STMicroelectronics

STPS30L30CR by STMicroelectronics

STPS30L30CR from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.37 V, supports up to 15 A output current, and has a peak reverse voltage of 30 V. Its flange mount design ensures easy integration in circuits.

Median Price

$2.320

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 834 parts In-Stock

1+ parts

$2.320

100+ parts

$1.014

1k+ parts

$0.810

10k+ parts

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834

$2.320

$1.014

$0.810

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Distributors (In-Stock)

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Digiode

USA . 1,422 parts In-Stock

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$2.204

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1,422

$2.204

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Vyrian

USA . 8,648 parts In-Stock

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8,648

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ComSIT Distribution GmbH

Germany . 8,000 parts In-Stock

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8,000

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ComSIT USA

USA . 3,600 parts In-Stock

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3,600

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Anansix

USA . 2,838 parts In-Stock

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2,838

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Sunrise Surplus Inc.

USA . 200 parts In-Stock

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200

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ACDS - Activité Composants Distribution Service

France . 17 parts In-Stock

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17

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,237 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

$0.164

10k+ parts

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1,237

$0.182

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$0.164

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MKK Technologies

India . 56 parts In-Stock

1+ parts

$0.343

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56

$0.343

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DigiPath Technology Company

USA . 56 parts In-Stock

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$0.343

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56

$0.343

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Corphita

USA . 3,615 parts In-Stock

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$2.088

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3,615

$2.088

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Microchip USA

USA . 226 parts In-Stock

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$10.205

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226

$10.205

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Kepictronics

USA . 13,000 parts In-Stock

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Parana Technologies

USA . 2,014 parts In-Stock

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$0.218

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2,014

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$0.218

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RC Electronics

USA . 2,000 parts In-Stock

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Overview

Unlock unparalleled performance with the STPS30L30CR Schottky rectifier from STMicroelectronics. Renowned for its exceptional quality, this diode ensures efficient power management and reliability in demanding applications. With a compact design and robust construction, it excels in energy-sensitive environments, offering low forward voltage drop and high surge capacity. Choose STMicroelectronics for cutting-edge solutions that drive your projects towards success, maximizing efficiency and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and protection against environmental factors, making this diode suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and allows for efficient integration in multi-diode arrangements.

Package Shape: RECTANGULAR

The rectangular package shape provides effective space utilization on PCBs, facilitating compact design layouts.

No. of Terminals: 3

With three terminals, the diode allows for versatile connections, enhancing flexibility in circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure mounting, promoting stability and reliability in high-power applications.

Application: POWER

Designed for power applications, this diode can handle high output currents, making it ideal for robust power management solutions.

Terminal Finish: TIN

The tin terminal finish provides good solderability, ensuring reliable connections during assembly and improving overall performance.

Terminal Position: SINGLE

The single terminal position allows for straightforward integration into circuits, making it user-friendly for designers.

Case Connection: CATHODE

Direct cathode connection aids in simple circuit layouts and improves the ease of installation and troubleshooting.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically optimized for converting alternating current (AC) to direct current (DC), essential in power supplies.

Maximum Forward Voltage (VF): 0.37 V

A low forward voltage drop reduces power losses and increases efficiency in power applications.

Maximum Output Current: 15 A

The capability of handling up to 15 A makes this diode suitable for high-current applications, enhancing its versatility.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower forward voltage drops, improving overall circuit efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminal design provides strong physical connections and is ideal for high-current applications, ensuring reliability.

No. of Elements: 2

With two elements, this diode can handle complex circuit configurations while maintaining efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 30 V

A high reverse voltage rating allows this diode to be used in a wide range of applications without failure, ensuring reliability.

Maximum Non-Repetitive Peak Forward Current: 220 A

The ability to withstand peak forward currents of up to 220 A makes this diode robust, suitable for transient conditions and demanding environments.

Diode Element Material: SILICON

Silicon as the diode element material offers good thermal stability and performance, essential for high-efficiency power applications.

Technical Specifications

Diodes & Rectifiers STPS30L30CR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30L30CR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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