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STPS30H60CW

STMicroelectronics

STPS30H60CW by STMicroelectronics

STPS30H60CW from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.47 V, supports up to 15 A output current, and has a peak reverse voltage of 60 V. Its flange mount design ensures easy integration in various circuits.

Median Price

$1.121

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,292 parts In-Stock

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Component Sense

UK . 2,358 parts In-Stock

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$1.121

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$0.760

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$0.760

2,358

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$1.121

$0.760

$0.760

Digiode

USA . 1,423 parts In-Stock

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Anansix

USA . 1,201 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 118 parts In-Stock

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Bristol Electronics

USA . 78 parts In-Stock

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Dan-Mar Components

USA . 78 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,549 parts In-Stock

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$0.071

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$0.064

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$0.071

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$0.064

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MKK Technologies

India . 2,241 parts In-Stock

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$0.133

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DigiPath Technology Company

USA . 2,241 parts In-Stock

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$0.133

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$0.133

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AZTECH Wire

Italy . 693 parts In-Stock

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$15.640

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Component Stockers USA

USA . 398 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 3,307 parts In-Stock

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Parana Technologies

USA . 1,543 parts In-Stock

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$0.085

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Kepictronics

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Perfect Parts

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Overview

Unlock unparalleled performance with the STPS30H60CW from STMicroelectronics, a leader in semiconductor solutions. This high-quality Schottky rectifier diode excels in power applications, offering exceptional efficiency and reliability. Designed for demanding environments, it ensures minimal voltage drop and rapid switching capabilities. Experience enhanced circuit design flexibility and durability, making it the ideal choice for your next project while benefiting from STMicroelectronics' trusted legacy of innovation and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and protection against environmental factors, enhancing the longevity of the diode.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design, making it easier to integrate the diode into various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, accommodating various design layouts.

No. of Terminals: 3

Having three terminals provides more flexibility in circuit design and ease of connection in various applications.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers secure attachment and ensures stability in high-vibration environments, making it ideal for power applications.

Application: POWER

Designed specifically for power applications, this diode can handle higher currents, making it suitable for demanding electronic systems.

Terminal Finish: TIN

The tin finish enhances solderability and ensures robust electrical connections, critical for reliable performance.

Terminal Position: SINGLE

The single terminal position simplifies connection and minimizes the complexity in circuit design.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, which is essential for many power supply applications.

Maximum Forward Voltage (VF): 0.47 V

A low forward voltage drop indicates high efficiency, reducing power loss and heat generation during operation.

Maximum Output Current: 15 A

With a maximum output current rating of 15 A, this diode is capable of handling significant loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, enhancing overall circuit performance.

Terminal Form: THROUGH-HOLE

Through-hole technology allows for strong physical connections and is often preferred for high-power applications.

No. of Elements: 2

Having two elements allows for increased versatility and improved performance in various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 60 V

A high reverse voltage rating ensures reliability and safety when used in high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 230 A

The capability to handle peak currents up to 230 A makes this diode resilient in transient conditions, protecting your circuit.

Diode Element Material: SILICON

Silicon is a standard semiconductor material known for its reliability and performance, ensuring consistent operation.

Technical Specifications

Diodes & Rectifiers STPS30H60CW attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Application:

POWER

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.47 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

230 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30H60CW Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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