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STPS3045CPIRG

STMicroelectronics

STPS3045CPIRG by STMicroelectronics

STPS3045CPIRG from STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.84 V, supports up to 15 A output current, and has a peak reverse voltage of 45 V. Its flange mount design ensures easy integration in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,582 parts In-Stock

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3,582

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Digiode

USA . 2,466 parts In-Stock

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2,466

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ComSIT Distribution GmbH

Germany . 600 parts In-Stock

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600

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Anansix

USA . 463 parts In-Stock

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463

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 480 parts In-Stock

1+ parts

$0.010

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480

$0.010

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IDEA Electronic Components Group

UK . 1,178 parts In-Stock

1+ parts

$0.075

100+ parts

-

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$0.067

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1,178

$0.075

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$0.067

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MKK Technologies

India . 646 parts In-Stock

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$0.140

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646

$0.140

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DigiPath Technology Company

USA . 646 parts In-Stock

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$0.140

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646

$0.140

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Component Stockers USA

USA . 58 parts In-Stock

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$1.090

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58

$1.090

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AZTECH Wire

Italy . 330 parts In-Stock

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$8.120

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330

$8.120

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Perfect Parts

USA . 1,243 parts In-Stock

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1,243

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Parana Technologies

USA . 752 parts In-Stock

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$0.089

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752

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$0.089

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Corphita

USA . 352 parts In-Stock

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352

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Overview

Experience unparalleled reliability with the STPS3045CPIRG Schottky rectifier diode from STMicroelectronics. Renowned for their commitment to quality, STMicroelectronics delivers this high-performance component that excels in power applications, ensuring efficient energy management and minimal heat loss. With its robust design and superior electrical characteristics, this diode enhances system durability and efficiency, making it an ideal choice for demanding environments. Elevate your designs with the trusted innovation of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to moisture, making the diode suitable for various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration allows for efficient thermal management and facilitates easy connections in power applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on the PCB, allowing for more efficient design in compact applications.

No. of Terminals: 3

Having three terminals simplifies the installation process and provides flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging offers robust mechanical stability, which is crucial for high-power applications.

Application: POWER

Designed specifically for power applications, this diode efficiently handles higher currents and voltages, ensuring reliable performance.

Terminal Position: SINGLE

Single terminal positioning streamlines the layout in circuit designs, minimizing complexity and space requirements.

Case Connection: ISOLATED

An isolated case connection enhances safety by reducing the risk of shorts and ensuring reliable operation in sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for various power conversion applications.

Maximum Forward Voltage (VF): 0.84 V

A low maximum forward voltage drop leads to better efficiency and less power loss in the circuit, improving overall performance.

Maximum Output Current: 15 A

With a high output current capability, this diode is suitable for demanding applications that require reliable power delivery.

Technology: SCHOTTKY

The Schottky technology results in faster switching speeds and lower forward voltage drops, enhancing efficiency in high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ensuring high reliability under various operating conditions.

No. of Elements: 2

Two elements allow for parallel operation, handling higher current loads while distributing heat effectively.

Maximum Repetitive Peak Reverse Voltage: 45 V

A high peak reverse voltage rating ensures that the diode can withstand short burst overloads in harsh operating environments.

Maximum Non-Repetitive Peak Forward Current: 220 A

This high maximum current rating enables the diode to handle large surges, making it suitable for pulsed applications.

Diode Element Material: SILICON

Silicon material is well-established in the industry, providing excellent reliability and performance in a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS3045CPIRG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS3045CPIRG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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