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STPS3030CT

STMicroelectronics

STPS3030CT by STMicroelectronics

STPS3030CT by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.42 V and supports up to 15 A output current. Its common cathode configuration and flange mount design enhance efficiency in various applications. Ideal for power management systems, it features a robust 30 V peak reverse voltage rating.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,367 parts In-Stock

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3,367

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Digiode

USA . 1,407 parts In-Stock

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1,407

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Anansix

USA . 1,329 parts In-Stock

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1,329

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Zilex Electronics Inc.

Canada . 390 parts In-Stock

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390

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Sunrise Surplus Inc.

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,028 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

$0.147

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-

2,028

$0.163

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$0.147

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MKK Technologies

India . 1,815 parts In-Stock

1+ parts

$0.306

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-

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1,815

$0.306

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DigiPath Technology Company

USA . 1,815 parts In-Stock

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$0.306

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1,815

$0.306

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Component Stockers USA

USA . 35 parts In-Stock

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$2.190

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35

$2.190

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Andel Nordic

Denmark . 1,606 parts In-Stock

1+ parts

$6.320

100+ parts

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$6.067

10k+ parts

$6.067

1,606

$6.320

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$6.067

$6.067

AZTECH Wire

Italy . 1,202 parts In-Stock

1+ parts

$17.780

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$17.780

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Kepictronics

USA . 13,000 parts In-Stock

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Perfect Parts

USA . 6,219 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,469 parts In-Stock

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Parana Technologies

USA . 1,414 parts In-Stock

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$0.195

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1,414

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$0.195

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Corphita

USA . 920 parts In-Stock

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920

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Overview

Elevate your electronics with the STPS3030CT diode from STMicroelectronics, a leader in innovation and quality. Designed for maximum efficiency, this Schottky rectifier enhances performance while minimizing energy loss, making it ideal for demanding applications like power supplies and renewable energy systems. Trust in ST's legacy of reliability, ensuring optimal functionality and durability, giving you peace of mind and boosting your project's success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures reliability and robustness, making the product suitable for various harsh environments.

Configuration: COMMON CATHODE, 2 ELEMENTS

This common cathode configuration allows for simpler circuit designs and improved thermal management, enhancing efficiency in applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient use of board space, allowing for easier integration into compact designs.

Number of Terminals: 3

With three terminals, this diode provides enhanced circuit options, offering flexibility for different electronic applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances stability and heat dissipation, making it ideal for high-power applications where reliability is critical.

Application: EFFICIENCY

Designed with efficiency in mind, this product optimizes power usage, which is particularly beneficial in energy-sensitive applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: SINGLE

The single terminal position simplifies wiring and assembly, contributing to more straightforward integration into circuits.

Case Connection: CATHODE

A cathode connection allows for streamlined integration into circuits, promoting ease of use and reduced complication in designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is optimized for converting AC to DC power, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.42 V

A low maximum forward voltage drop ensures minimal energy loss during operation, increasing overall efficiency in power conversion.

Maximum Output Current: 15 A

The high maximum output current capability allows for handling significant loads, making it a reliable option for various power applications.

Technology: SCHOTTKY

Utilizing Schottky technology results in faster switching speeds and lower forward voltage drops, making this diode ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide excellent mechanical strength and ease of soldering, ensuring secure connections in demanding environments.

Number of Elements: 2

Two elements enhance the diode's performance by providing higher efficiency and better voltage handling, ideal for a variety of applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high reverse voltage rating ensures that the diode can withstand significant voltage spikes, enhancing reliability in circuit protection.

Maximum Non-Repetitive Peak Forward Current: 250 A

The capability to handle high non-repetitive peak currents makes this diode suitable for transient loads, protecting against overload conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent thermal stability and reliability, ensuring consistent performance in various applications.

Technical Specifications

Diodes & Rectifiers STPS3030CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS3030CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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