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STPS30170CT

STMicroelectronics

STPS30170CT by STMicroelectronics

STPS30170CT by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max output current of 15 A, a peak reverse voltage of 170 V, and a low forward voltage drop of 0.75 V. Its flange mount design ensures reliable performance in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,217 parts In-Stock

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Digiode

USA . 2,219 parts In-Stock

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Anansix

USA . 531 parts In-Stock

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Semtec, LLC

USA . 100 parts In-Stock

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IDEA Electronic Components Group

UK . 506 parts In-Stock

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$0.121

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$0.108

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506

$0.121

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$0.108

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MKK Technologies

India . 1,450 parts In-Stock

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$0.227

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$0.227

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DigiPath Technology Company

USA . 1,450 parts In-Stock

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$0.227

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$0.227

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AZTECH Wire

Italy . 825 parts In-Stock

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$14.310

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Component Stockers USA

USA . 409 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 20,458 parts In-Stock

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Corphita

USA . 3,693 parts In-Stock

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Kepictronics

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Infinite Electronics LLP (Excess)

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Parana Technologies

USA . 486 parts In-Stock

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$0.144

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Overview

Elevate your power management solutions with the STPS30170CT from STMicroelectronics, a leader in innovative semiconductor technology. This high-performance rectifier diode boasts exceptional efficiency and reliability, ensuring optimal operation in demanding high voltage applications. With its robust design and advanced Schottky technology, it delivers low forward voltage drop and high current capacity, making it an ideal choice for enhancing the performance of your electronic systems while significantly reducing energy loss. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easy integration in circuit designs requiring stable connections of multiple diodes.

Package Shape: RECTANGULAR

The rectangular shape of the package aids in efficient space utilization on circuit boards, allowing for compact designs.

No. of Terminals: 3

With three terminals, this diode can be easily configured in various circuit applications and provides flexibility in layout.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures secure attachment to the mounting surface, enhancing stability and heat dissipation.

Application: HIGH VOLTAGE POWER

Designed for high-voltage power applications, this diode effectively manages high energy levels, making it reliable in demanding environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and enhances corrosion resistance, ensuring long-term reliability of connections.

Terminal Position: SINGLE

Having a single terminal position simplifies the circuit design, making implementation straightforward.

Case Connection: CATHODE

The cathode case connection allows for efficient reverse bias operation, which is crucial for rectification applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed to convert alternating current (AC) to direct current (DC), making it ideal for power applications.

Maximum Forward Voltage (VF): 0.75 V

With a low forward voltage drop, this diode minimizes power losses during operation, contributing to overall circuit efficiency.

Maximum Output Current: 15 A

The capability to handle a maximum output current of 15 A makes this product suitable for high current applications.

Technology: SCHOTTKY

Being a Schottky diode, it provides faster switching times and lower forward voltage drops compared to regular diodes, enhancing performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for robust connections and ease of mounting on printed circuit boards.

No. of Elements: 2

Having two elements provides enhanced current handling and redundancy in circuit designs, improving reliability.

Maximum Repetitive Peak Reverse Voltage: 170 V

Designed for high reverse voltage applications, this diode can withstand significant voltage spikes, increasing circuit robustness.

Maximum Non Repetitive Peak Forward Current: 220 A

The ability to handle a non-repetitive peak forward current of 220 A allows for high burst power applications without damage.

Diode Element Material: SILICON

Using silicon for the diode elements ensures excellent electrical performance and thermal stability, essential for reliable operation.

Technical Specifications

Diodes & Rectifiers STPS30170CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30170CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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