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STPS30170CG

STMicroelectronics

STPS30170CG by STMicroelectronics

STPS30170CG by STMicroelectronics is a Schottky rectifier diode ideal for high voltage power applications. It features a max output current of 15 A, peak reverse voltage of 170 V, and a low forward voltage drop of 0.75 V. Its compact surface mount design ensures efficient performance in space-constrained environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,531 parts In-Stock

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Digiode

USA . 4,104 parts In-Stock

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Anansix

USA . 515 parts In-Stock

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515

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IDEA Electronic Components Group

UK . 2,169 parts In-Stock

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$0.119

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$0.107

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2,169

$0.119

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MKK Technologies

India . 998 parts In-Stock

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$0.223

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998

$0.223

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DigiPath Technology Company

USA . 998 parts In-Stock

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$0.223

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998

$0.223

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AZTECH Wire

Italy . 1,139 parts In-Stock

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$16.510

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$16.510

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QUARKTWIN TECHNOLOGY LTD

USA . 29,615 parts In-Stock

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Corphita

USA . 133 parts In-Stock

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Parana Technologies

USA . 29 parts In-Stock

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$0.142

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29

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Overview

Unlock the power of efficiency with the STPS30170CG Schottky rectifier diode from STMicroelectronics! Renowned for its exceptional quality and reliability, STMicroelectronics delivers this high-performance component ideal for high-voltage power applications. With its compact design and superior thermal management, the STPS30170CG ensures seamless operation, maximizing energy efficiency while minimizing losses. Elevate your designs with a trusted partner that stands for innovation and excellence, and experience the difference in performance and durability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent protection against moisture and mechanical stress, enhancing reliability in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easier integration into circuits requiring multiple diodes, simplifying design and layout.

Surface Mount: YES

Being surface mount compatible allows for compact PCB designs, aiding in space-saving applications.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient space utilization on printed circuit boards.

No. of Terminals: 2

The design with only two terminals simplifies connections and reduces the possibility of errors during assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density mounting, making it suitable for modern electronic applications.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode can handle demanding electrical environments, ensuring efficient operation.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and corrosion resistance, optimizing long-term reliability in circuits.

Terminal Position: SINGLE

Having a single terminal position simplifies the mounting process on PCBs, reducing assembly complexity.

Case Connection: CATHODE

The cathode connection is standard in many applications, making it compatible with a wide range of circuits.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds ensures compatibility with modern PCB assembly processes without damaging the diode.

Peak Reflow Temperature: 245 °C

The high peak reflow temperature capability makes this diode suitable for lead-free soldering processes, enhancing its applicability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for efficient conversion of alternating current (AC) to direct current (DC), allowing for effective power management.

Maximum Forward Voltage (VF): 0.75 V

With a low maximum forward voltage drop, this diode minimizes power loss during operation, improving overall circuit efficiency.

Maximum Output Current: 15 A

The capability to handle up to 15 A output current makes this diode suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides faster switching speeds and lower forward voltage drop, making it ideal for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and reflow processes, ensuring reliable connections.

No. of Elements: 2

Having two elements allows for better handling of current and voltage specifications, making it versatile in various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 170 V

A high maximum repetitive peak reverse voltage rating ensures reliability and durability under substantial voltage fluctuations.

Maximum Non Repetitive Peak Forward Current: 220 A

With a maximum non-repetitive peak forward current of 220 A, the diode can handle transient events without damage, making it robust for dynamic applications.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides excellent electrical performance and thermal stability.

Technical Specifications

Diodes & Rectifiers STPS30170CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS30170CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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