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STPS30150CG

STMicroelectronics

STPS30150CG by STMicroelectronics

STPS30150CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max output current of 15 A, peak reverse voltage of 150 V, and a low forward voltage drop of 0.75 V. Its compact surface mount design ensures efficient performance in space-constrained environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 2,599 parts In-Stock

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2,599

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Vyrian

USA . 2,305 parts In-Stock

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2,305

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Ashlea Components Ltd

UK . 435 parts In-Stock

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435

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Anansix

USA . 369 parts In-Stock

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369

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IDEA Electronic Components Group

UK . 331 parts In-Stock

1+ parts

$0.040

100+ parts

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$0.036

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331

$0.040

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$0.036

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MKK Technologies

India . 825 parts In-Stock

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$0.076

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825

$0.076

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DigiPath Technology Company

USA . 825 parts In-Stock

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$0.076

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825

$0.076

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AZTECH Wire

Italy . 507 parts In-Stock

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$14.320

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507

$14.320

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 4,575 parts In-Stock

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4,575

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Parana Technologies

USA . 1,508 parts In-Stock

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$0.048

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1,508

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$0.048

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Overview

Unlock the potential of your high-voltage power applications with the STPS30150CG from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics provides reliable solutions that excel in performance. This Schottky rectifier diode combines efficiency with a compact design, ensuring optimal current flow and minimal power loss. Elevate your projects with a trusted component that promises durability and superior functionality—experience the advantage of excellence in every circuit!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and protection against environmental factors, making this diode suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies the circuit design, allowing for easier integration into various electronic systems.

Surface Mount: YES

Surface mount capability facilitates compact designs and automated assembly, increasing efficiency in manufacturing.

Package Shape: RECTANGULAR

A rectangular package shape allows for effective heat dissipation and easier layout planning on printed circuit boards (PCBs).

No. of Terminals: 2

With only two terminals, this product reduces complexity in connections, making it easier and more reliable to install in electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, ensuring that the product fits easily into compact devices.

Application: HIGH VOLTAGE POWER

Designed for high voltage applications, this diode offers reliability and performance in demanding conditions, making it suitable for power supply circuits.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish enhances solderability and corrosion resistance, ensuring a stable and long-lasting connection.

Terminal Position: SINGLE

A single terminal position allows for straightforward layout in PCB designs, simplifying construction and reducing potential errors.

Case Connection: CATHODE

The cathode connection is crucial for proper diode operation, enhancing circuit functionality and ensuring correct current flow.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds ensures component integrity during soldering, preventing thermal damage and prolonging device life.

Peak Reflow Temperature: 245 °C

Operating at up to 245 °C allows compatibility with modern soldering processes, making it versatile for manufacturers.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 0.75 V

The low forward voltage drop maximizes efficiency in power applications, reducing energy loss and improving performance.

Maximum Output Current: 15 A

With a maximum output current of 15 A, this diode can handle significant loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage, making this diode efficient for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical stability and enhance the effectiveness of solder joints, ensuring reliability in operation.

No. of Elements: 2

Two elements enhance performance capabilities, making the diode versatile for different circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 150 V

A high peak reverse voltage rating indicates the diode's robustness, making it ideal for high-voltage applications and environments.

Maximum Non-Repetitive Peak Forward Current: 220 A

The capacity to handle 220 A of non-repetitive peak forward current allows for resilience during transient conditions, enhancing circuit protection.

Diode Element Material: SILICON

Silicon as a diode element material ensures reliable performance and is widely recognized for its efficacy in semiconductor applications.

Technical Specifications

Diodes & Rectifiers STPS30150CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS30150CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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