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STPS30120CTN

STMicroelectronics

STPS30120CTN by STMicroelectronics

STMicroelectronics' STPS30120CTN is a Schottky rectifier diode with 120V reverse voltage and 15A output current. It features common cathode configuration, matte tin finish, and plastic/epoxy package body. Ideal for power applications requiring low forward voltage of 1.02V and high non-repetitive peak forward current of 180A.

Median Price

$3.202

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,663 parts In-Stock

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$3.202

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$3.202

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Vyrian

USA . 12,586 parts In-Stock

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12,586

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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ComSIT USA

USA . 2,000 parts In-Stock

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Anansix

USA . 1,179 parts In-Stock

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1,179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,435 parts In-Stock

1+ parts

$0.137

100+ parts

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1k+ parts

$0.123

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1,435

$0.137

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$0.123

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MKK Technologies

India . 1,566 parts In-Stock

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$0.258

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1,566

$0.258

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DigiPath Technology Company

USA . 1,566 parts In-Stock

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$0.258

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1,566

$0.258

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Corphita

USA . 1,763 parts In-Stock

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$3.033

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1,763

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Microchip USA

USA . 218 parts In-Stock

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$16.965

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218

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Parana Technologies

USA . 1,669 parts In-Stock

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$0.164

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1,669

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$0.164

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Overview

Experience the superior quality and reliability of STMicroelectronics with the STPS30120CTN diode rectifier. With a maximum output current of 15A and a maximum reverse voltage of 120V, this product is perfect for power applications. The common cathode configuration and Schottky technology ensure efficient performance and durability. Trust in STMicroelectronics for cutting-edge technology and unmatched value in every product, providing you with the competitive edge you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and resistant to external elements, ensuring the reliability and longevity of the product.

Config: COMMON CATHODE, 2 ELEMENTS

Having a common cathode configuration with 2 elements allows for efficient power management and consistent performance in various applications.

Maximum Reverse Current: 15 uA

The low maximum reverse current of 15 uA indicates minimal power loss and efficient utilization of energy, making this diode a cost-effective choice.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration and installation in different electronic devices, enhancing versatility and compatibility.

No. of Terminals: 3

With 3 terminals, this diode provides flexibility in circuit connections and design, allowing for various configurations to suit different applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enables secure and stable mounting, ensuring safety and reliability in use, especially in power applications.

Application: POWER

Designed for power applications, this diode can handle high output currents and voltages efficiently, making it suitable for power supply units and similar devices.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability, enhancing electrical connections and ensuring optimal performance.

Terminal Position: SINGLE

Having a single terminal position simplifies installation and maintenance processes, making this diode user-friendly and convenient for technicians.

Case Connection: CATHODE

The cathode case connection offers better heat dissipation and thermal management, contributing to the overall efficiency and reliability of the diode.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts alternating current (AC) to direct current (DC), making it essential for power supply circuits and voltage regulation.

Maximum Forward Voltage (VF): 1.02 V

The low maximum forward voltage of 1.02 V indicates minimal voltage drop across the diode, reducing power loss and enhancing overall circuit efficiency.

Maximum Output Current: 15 A

With a maximum output current of 15 A, this diode can handle high power loads effectively, making it suitable for power-intensive applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low forward voltage drop, ideal for high-frequency and high-efficiency applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure mounting and reliable connections, ensuring stable performance in demanding environments.

No. of Elements: 2

Having 2 elements allows for enhanced power handling capacity and improved current flow, making this diode suitable for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

The high maximum repetitive peak reverse voltage of 120 V ensures reliable operation and protection against voltage spikes, enhancing the durability of the diode.

Maximum Non Repetitive Peak Forward Current: 180 A

With a maximum non-repetitive peak forward current of 180 A, this diode can withstand high current surges and protect the circuit from damage.

Diode Element Material: SILICON

Being made of silicon, the diode element material offers good thermal conductivity and stability, ensuring long-term reliability and consistent performance.

Technical Specifications

Diodes & Rectifiers STPS30120CTN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED,LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.02 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

15 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS30120CTN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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