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STPS2L40AFN

STMicroelectronics

STPS2L40AFN by STMicroelectronics

STPS2L40AFN by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max reverse voltage of 40V, forward current of 2A, and operates up to 150 °C. Its compact surface mount design ensures efficient thermal management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,935 parts In-Stock

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3,935

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Digiode

USA . 680 parts In-Stock

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680

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Anansix

USA . 602 parts In-Stock

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602

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,085 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

$0.133

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2,085

$0.148

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$0.133

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MKK Technologies

India . 2,286 parts In-Stock

1+ parts

$0.279

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2,286

$0.279

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DigiPath Technology Company

USA . 2,286 parts In-Stock

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$0.279

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2,286

$0.279

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Component Stockers USA

USA . 44,271 parts In-Stock

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$1.590

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44,271

$1.590

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AZTECH Wire

Italy . 1,043 parts In-Stock

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$11.590

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1,043

$11.590

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 845 parts In-Stock

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$0.177

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845

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$0.177

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Corphita

USA . 192 parts In-Stock

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192

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Overview

Unlock the potential of your power applications with the STPS2L40AFN from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance Schottky rectifier diode delivers exceptional efficiency and reliability, ensuring your designs operate seamlessly even under demanding conditions. Its compact surface-mount package makes integration effortless while providing outstanding thermal performance. Choose STMicroelectronics for quality you can count on, enhancing your projects with unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers excellent thermal and electrical insulation, ensuring durability and reliability in various applications.

Config: SINGLE

The single configuration allows for straightforward integration into circuits, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mount compatible makes installation easier and more efficient, especially in compact designs.

Maximum Reverse Current: 220 uA

A low maximum reverse current minimizes power loss and improves efficiency, making it ideal for energy-sensitive applications.

Package Shape: RECTANGULAR

The rectangular package shape is optimized for space efficiency on PCBs, allowing for denser circuit layouts.

Reverse Test Voltage: 40 V

With a high reverse test voltage, this diode is capable of handling significant reverse stress, enhancing reliability in high-voltage applications.

No. of Terminals: 2

The standard 2-terminal design simplifies circuit connections and improves versatility in various electronic designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps conserve board space, making it an excellent choice for portable and compact electronics.

Application: POWER

Designed specifically for power applications, it ensures optimal performance in energy management and conversion tasks.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows this diode to function reliably in harsh environments and high-temperature applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring durable connections.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and layout.

Peak Reflow Temperature °C: 260

The ability to withstand high reflow temperatures makes it suitable for modern soldering techniques, ensuring robust assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for efficient current conversion and regulation in power supply applications.

Maximum Forward Voltage (VF): 0.5 V

A low maximum forward voltage drop leads to higher efficiency and lower power loss in power conversion circuits.

Maximum Output Current: 2 A

Capable of handling up to 2 A output current, this diode is suitable for a wide array of power management applications.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage, ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal form enhances contact area for soldering, providing stronger connections and improved reliability.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a peak reverse voltage rating of 40 V, this product can withstand significant reverse voltages, adding to its versatility.

Maximum Non Repetitive Peak Forward Current: 75 A

The capability to handle high non-repetitive peak forward currents makes it ideal for applications that experience brief surges.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures robust performance and reliability in a variety of electronic applications.

Technical Specifications

Diodes & Rectifiers STPS2L40AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.5 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

220 uA

Reverse Test Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS2L40AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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