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STPS2545CG

STMicroelectronics

STPS2545CG by STMicroelectronics

STPS2545CG by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max output current of 12.5 A, a peak reverse voltage of 45 V, and operates at a forward voltage of just 0.57 V. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,842 parts In-Stock

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4,842

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Anansix

USA . 2,416 parts In-Stock

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2,416

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Digiode

USA . 1,527 parts In-Stock

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1,527

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 95 parts In-Stock

1+ parts

$0.092

100+ parts

-

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$0.083

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-

95

$0.092

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$0.083

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MKK Technologies

India . 1,316 parts In-Stock

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$0.173

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1,316

$0.173

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DigiPath Technology Company

USA . 1,316 parts In-Stock

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$0.173

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1,316

$0.173

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AZTECH Wire

Italy . 458 parts In-Stock

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$8.400

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458

$8.400

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Component Stockers USA

USA . 434 parts In-Stock

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$99.990

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434

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,919 parts In-Stock

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26,919

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Parana Technologies

USA . 2,226 parts In-Stock

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$0.110

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2,226

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$0.110

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Corphita

USA . 1,603 parts In-Stock

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Overview

Unlock the power of efficiency with the STPS2545CG from STMicroelectronics, a leading innovator in semiconductor solutions. This robust Schottky rectifier diode is designed to enhance performance in various power applications, offering superior reliability and minimal voltage drop. With its compact surface mount design and impressive handling capabilities, it’s perfect for modern electronics, ensuring your projects benefit from both quality and enhanced energy savings. Transform your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliability in various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

A common cathode configuration allows for easy integration in circuits requiring multiple diodes, enhancing circuit design flexibility.

Surface Mount: YES

The surface mount capability facilitates automated assembly processes, reducing production costs and improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package optimizes space utilization on PCBs, making it suitable for compact designs.

No. of Terminals: 2

With two terminals, this diode is straightforward to connect, promoting ease of use in circuit assembly.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications with limited space, allowing for more compact device designs.

Application: POWER

Designed specifically for power applications, ensuring optimal performance in high-current and high-voltage environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish improves solderability, ensuring reliable connections in PCB assembly.

Terminal Position: SINGLE

A single terminal position simplifies layout and connection in PCB designs, ensuring consistent performance.

Case Connection: CATHODE

The cathode connection promotes better thermal dissipation and stability in high-power applications.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum exposure time of 30 seconds at peak reflow temperature minimizes the risk of thermal damage during soldering.

Peak Reflow Temperature: 245 °C

The relatively high peak reflow temperature ensures compatibility with various solder processes, enhancing manufacturing options.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for efficient conversion of AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.57 V

A low forward voltage drop improves efficiency, reducing power loss in high-current applications.

Maximum Output Current: 12.5 A

The ability to handle up to 12.5 A makes this diode suitable for robust power applications, providing reliable performance.

Technology: SCHOTTKY

The Schottky technology minimizes switching losses and offers faster switching speeds, making it ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and offers good mechanical stability.

No. of Elements: 2

Having two elements allows for parallel operation, effectively increasing current handling capability.

Maximum Repetitive Peak Reverse Voltage: 45 V

With a maximum reverse voltage of 45 V, the diode is suitable for a variety of application needs without the risk of breakdown.

Maximum Non-Repetitive Peak Forward Current: 200 A

The capacity to handle up to 200 A non-repetitively ensures robustness against surges, making it highly reliable in critical applications.

Diode Element Material: SILICON

Silicon material provides excellent thermal conductivity and performance, ensuring long-lasting reliability in various conditions.

Technical Specifications

Diodes & Rectifiers STPS2545CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

12.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS2545CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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