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STPS2170AFN

STMicroelectronics

STPS2170AFN by STMicroelectronics

STPS2170AFN by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max reverse voltage of 170 V, forward current of 2 A, and operates up to 175 °C. Its compact surface mount design ensures efficient performance in various circuits.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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RS (Exports)

UK . 150 parts In-Stock

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Vyrian

USA . 11,246 parts In-Stock

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Digiode

USA . 4,610 parts In-Stock

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Anansix

USA . 1,260 parts In-Stock

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IDEA Electronic Components Group

UK . 433 parts In-Stock

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$0.029

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$0.026

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433

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$0.026

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MKK Technologies

India . 1,558 parts In-Stock

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$0.054

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$0.054

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DigiPath Technology Company

USA . 1,558 parts In-Stock

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$0.054

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$0.054

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AZTECH Wire

Italy . 360 parts In-Stock

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$17.720

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QUARKTWIN TECHNOLOGY LTD

USA . 9,892 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,045 parts In-Stock

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Parana Technologies

USA . 1,347 parts In-Stock

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Allen Electronics Distributors

USA . 250 parts In-Stock

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$0.343

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$0.278

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Corphita

USA . 130 parts In-Stock

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Overview

Unlock exceptional performance with the STPS2170AFN Schottky rectifier from STMicroelectronics. Renowned for its reliability and efficiency, this diode is designed to excel in power applications, ensuring minimal energy loss and robust operation even at elevated temperatures. Benefit from its compact surface mount design, making it perfect for modern electronics. Trust in STMicroelectronics’ legacy of quality to enhance your projects with superior performance and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures reliability and resilience against environmental factors, making it suitable for various applications.

Config: SINGLE

The single configuration simplifies integration into circuits, allowing for efficient space utilization in designs.

Surface Mount: YES

Surface mount capability enables easy assembly and a compact layout, ideal for modern electronic devices.

Maximum Reverse Current: 2.8 uA

With a low reverse current, this diode minimizes standby power loss, enhancing energy efficiency in circuits.

Package Shape: RECTANGULAR

The rectangular shape facilitates better board space management and component density in circuit designs.

Reverse Test Voltage: 170 V

A high reverse test voltage ensures that this diode can withstand significant reverse bias, improving reliability in high-voltage applications.

No. of Terminals: 2

With two terminals, the component is easy to connect, allowing for straightforward integration into a variety of circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-efficient design and is perfect for compact electronics.

Application: POWER

This diode is tailored for power applications, ensuring high performance in demanding power management scenarios.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature provides greater thermal stability, allowing it to function reliably in extreme conditions.

Terminal Position: DUAL

The dual terminal position enhances flexibility in layout design, improving design options for engineers.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it’s ideal for converting alternating current (AC) to direct current (DC), fulfilling critical roles in power circuits.

Maximum Forward Voltage (VF): 0.89 V

A low forward voltage drop enhances efficiency in power applications, reducing energy waste and heat generation.

Maximum Output Current: 2 A

Supporting a high output current makes this diode suitable for applications requiring substantial current flow.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower voltage drop, making it ideal for high-efficiency applications.

Terminal Form: FLAT

Flat terminal form allows for easier soldering and better surface contact, enhancing reliability in connections.

Maximum Repetitive Peak Reverse Voltage: 170 V

A high peak reverse voltage rating guarantees robust performance in challenging electrical environments.

Maximum Non Repetitive Peak Forward Current: 70 A

The capability to handle high non-repetitive peak forward current makes this diode suitable for surge applications without damage.

Diode Element Material: SILICON

Silicon material is a standard in semiconductor technology, providing excellent electrical properties and reliability for diodes.

Technical Specifications

Diodes & Rectifiers STPS2170AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

70 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

2.8 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS2170AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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