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STPS20SM100SG-TR

STMicroelectronics

STPS20SM100SG-TR by STMicroelectronics

STPS20SM100SG-TR by STMicroelectronics is a Schottky rectifier diode ideal for efficiency applications. It features a max output current of 20 A, a peak reverse voltage of 100 V, and operates at up to 150 °C. Its compact surface mount design ensures easy integration in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,757 parts In-Stock

1+ parts

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7,757

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Digiode

USA . 4,785 parts In-Stock

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4,785

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Anansix

USA . 1,342 parts In-Stock

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1,342

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 994 parts In-Stock

1+ parts

$0.010

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994

$0.010

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IDEA Electronic Components Group

UK . 1,736 parts In-Stock

1+ parts

$0.040

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-

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$0.036

10k+ parts

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1,736

$0.040

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$0.036

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MKK Technologies

India . 665 parts In-Stock

1+ parts

$0.074

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665

$0.074

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DigiPath Technology Company

USA . 665 parts In-Stock

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$0.074

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665

$0.074

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AZTECH Wire

Italy . 691 parts In-Stock

1+ parts

$10.900

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691

$10.900

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Component Stockers USA

USA . 587 parts In-Stock

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$99.990

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587

$99.990

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Corphita

USA . 4,911 parts In-Stock

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4,911

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Perfect Parts

USA . 1,870 parts In-Stock

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1,870

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Parana Technologies

USA . 862 parts In-Stock

1+ parts

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$0.047

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862

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$0.047

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Overview

Unlock unmatched efficiency with the STPS20SM100SG-TR Schottky diode from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for high-performance applications, this surface-mount rectifier ensures optimal power conversion and thermal stability, even at elevated temperatures. Its compact form factor and robust construction make it ideal for space-constrained designs. Elevate your projects with quality you can rely on—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protects the diode from environmental factors, enhancing reliability in various applications.

Config: SINGLE

A single configuration simplifies integration into circuits, making it easier to implement without complexity.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes, saving space on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape offers efficient use of board space and enhances cooling characteristics.

No. of Terminals: 2

Having only two terminals reduces the complexity of connections and simplifies circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a lower overall system footprint, making it ideal for space-constrained applications.

Application: EFFICIENCY

Designed for efficiency, this diode minimizes power losses, making it suitable for high-performance applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in demanding environments, ensuring reliable performance under heat.

Terminal Position: SINGLE

The single terminal position aids in easier mounting and layout design in circuit boards.

Case Connection: CATHODE

The cathode connection facilitates straightforward circuit design in familiar diode configurations, helping in easier integration.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), essential for various applications.

Maximum Forward Voltage (VF): 0.62 V

The low forward voltage drop results in higher efficiency and less heat generation during operation.

Maximum Output Current: 20 A

This high output current rating makes the diode suitable for heavy-duty applications, ensuring it can handle substantial loads.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers faster switching speeds and lower forward voltage drops compared to traditional diodes.

Terminal Form: GULL WING

The gull-wing terminal form ensures stable soldering connections and makes it easier for automated assembly processes.

Maximum Repetitive Peak Reverse Voltage: 100 V

The ability to withstand high reverse voltages protects the circuit from voltage spikes, enhancing durability.

Maximum Non Repetitive Peak Forward Current: 350 A

This high peak forward current tolerance allows the diode to handle surge conditions without damage, making it reliable for transient applications.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics, ensuring robust performance in a variety of circuits.

Technical Specifications

Diodes & Rectifiers STPS20SM100SG-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.62 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20SM100SG-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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