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STPS20LCD80CB-TR

STMicroelectronics

STPS20LCD80CB-TR by STMicroelectronics

STPS20LCD80CB-TR by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max reverse voltage of 80V, forward current of 10A, and operates up to 175 °C. Ideal for compact surface mount designs with low VF of 1.16V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,292 parts In-Stock

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8,292

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Anansix

USA . 2,507 parts In-Stock

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2,507

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Digiode

USA . 402 parts In-Stock

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402

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,256 parts In-Stock

1+ parts

$0.102

100+ parts

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1k+ parts

$0.092

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2,256

$0.102

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$0.092

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MKK Technologies

India . 705 parts In-Stock

1+ parts

$0.192

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705

$0.192

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DigiPath Technology Company

USA . 705 parts In-Stock

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$0.192

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705

$0.192

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AZTECH Wire

Italy . 181 parts In-Stock

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$13.280

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181

$13.280

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Alle Elektronik GmbH

Germany . 4,422 parts In-Stock

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4,422

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Parana Technologies

USA . 1,859 parts In-Stock

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$0.122

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1,859

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$0.122

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Corphita

USA . 640 parts In-Stock

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640

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Overview

Unlock unparalleled efficiency and reliability with the STPS20LCD80CB-TR, a premium Schottky rectifier diode from STMicroelectronics. Renowned for their cutting-edge technology and commitment to quality, STMicroelectronics delivers exceptional performance across various applications, from power management to renewable energy systems. With its robust design and impressive thermal capabilities, this diode ensures optimal operation under demanding conditions, providing customers with peace of mind and enhanced system longevity. Elevate your projects with the trusted excellence of STMicroelectronics today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliability in various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuit design and efficient current handling.

Surface Mount: YES

Surface mount capability facilitates easier integration into modern electronic designs, saving board space.

Maximum Reverse Current: 15 uA

A low reverse current minimizes energy loss, enhancing overall efficiency and performance.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB while maintaining ease of assembly.

Reverse Test Voltage: 80 V

A high reverse test voltage indicates strong performance under reverse bias conditions, improving reliability.

No. of Terminals: 2

Two terminals simplify connections, making it straightforward to integrate into various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is suitable for compact applications, aiding in creating smaller products.

Application: EFFICIENCY

Designed for efficiency, this diode optimizes power usage, making it perfect for energy-conscious applications.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows use in aggressive thermal environments without performance degradation.

Terminal Position: SINGLE

Single terminal position ensures versatility in PCB layout while allowing for straightforward installation.

Case Connection: CATHODE

Cathode case connection helps ensure precise current flow direction in rectification applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.16 V

A low forward voltage drop increases efficiency in power applications by reducing energy loss.

Maximum Output Current: 10 A

The ability to handle a maximum output current of 10 A makes it suitable for high-power applications.

Technology: SCHOTTKY

Schottky technology provides faster switching speeds and lower voltage drops, enhancing performance in high frequency applications.

Terminal Form: GULL WING

Gull wing terminals ensure reliable solder joints and ease of use during assembly in automated processes.

No. of Elements: 2

Two elements provide added rectification capability, making this diode versatile for various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 80 V

A high repetitive peak reverse voltage rating indicates robustness and capability to withstand stressful electrical conditions.

Maximum Non Repetitive Peak Forward Current: 125 A

The high non-repetitive peak forward current makes it excellent for applications that experience transient spikes.

Diode Element Material: SILICON

Silicon as the diode element material ensures reliability and performance in a wide range of electronic circuits.

Technical Specifications

Diodes & Rectifiers STPS20LCD80CB-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.16 V

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

15 uA

Reverse Test Voltage:

80 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20LCD80CB-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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