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STPS20LCD200CBTR

STMicroelectronics

STPS20LCD200CBTR by STMicroelectronics

STPS20LCD200CBTR by STMicroelectronics is a Schottky rectifier diode ideal for efficiency applications. It features a max reverse voltage of 200 V, forward voltage drop of 1.125 V, and low reverse current of 5 µA. Its compact design suits surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,376 parts In-Stock

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8,376

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Digiode

USA . 3,280 parts In-Stock

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3,280

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Anansix

USA . 2,653 parts In-Stock

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2,653

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,002 parts In-Stock

1+ parts

$0.036

100+ parts

-

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$0.032

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1,002

$0.036

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$0.032

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MKK Technologies

India . 325 parts In-Stock

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$0.067

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325

$0.067

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DigiPath Technology Company

USA . 325 parts In-Stock

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$0.067

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325

$0.067

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AZTECH Wire

Italy . 851 parts In-Stock

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$20.640

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851

$20.640

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Component Stockers USA

USA . 633 parts In-Stock

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$99.990

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633

$99.990

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Alle Elektronik GmbH

Germany . 3,473 parts In-Stock

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Corphita

USA . 2,776 parts In-Stock

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2,776

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Parana Technologies

USA . 1,831 parts In-Stock

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$0.043

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1,831

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$0.043

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Overview

Unlock unparalleled efficiency with the STPS20LCD200CBTR Schottky rectifier diode from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics ensures this compact solution excels in applications requiring reliability and high performance. With minimal reverse current and robust forward voltage capabilities, it delivers exceptional energy savings while maximizing system longevity. Elevate your projects with cutting-edge technology that translates into tangible benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and offers protection against environmental factors.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration makes it easy to integrate the diode in various circuit designs, facilitating efficient operation in rectifying applications.

Surface Mount: YES

Surface mount capability allows for automated assembly processes, improving manufacturing efficiency and reducing overall production costs.

Maximum Reverse Current: 5 uA

A low maximum reverse current of 5 uA indicates excellent reverse leakage characteristics, making this diode suitable for high-efficiency applications.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient space utilization on PCBs, enabling compact designs.

No. of Terminals: 2

Having only two terminals simplifies connections and reduces complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline style ensures that the diode can be used in tight spaces, fitting well in compact electronic devices.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications requiring minimal energy loss during operation, enhancing overall system performance.

Terminal Position: SINGLE

A single terminal position streamlines the layout for integrated circuits, minimizing potential connection errors.

Case Connection: CATHODE

With the cathode connection, this diode can be effectively used in circuits where reverse polarity protection is needed.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed to efficiently convert alternating current (AC) to direct current (DC), crucial for power supply applications.

Maximum Forward Voltage (VF): 1.125 V

A relatively low forward voltage drop of 1.125 V minimizes power loss during operation, enhancing the overall energy efficiency of the circuit.

Technology: SCHOTTKY

The Schottky technology allows for extremely fast switching speeds, making it suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide mechanical stability and easy solderability, leading to reliable connections on PCBs.

No. of Elements: 2

Having two elements allows this diode to handle higher current loads and improve performance in rectification tasks.

Maximum Repetitive Peak Reverse Voltage: 200 V

A maximum voltage rating of 200 V demonstrates the diode's robustness, making it suitable for various high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 125 A

The ability to withstand peak forward currents of 125 A enables this diode to be used in demanding power applications without failure.

Diode Element Material: SILICON

Silicon as the diode element material ensures good thermal conductivity and electrical performance, making it suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers STPS20LCD200CBTR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.125 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20LCD200CBTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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