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STPS20L120CT

STMicroelectronics

STPS20L120CT by STMicroelectronics

STPS20L120CT by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.605 V and supports up to 20 A output current. It features a common cathode configuration in a flange mount package. Ideal for power supply applications, it handles peak reverse voltages of 120 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,685 parts In-Stock

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3,685

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Vyrian

USA . 2,964 parts In-Stock

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2,964

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Anansix

USA . 2,238 parts In-Stock

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2,238

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,351 parts In-Stock

1+ parts

$0.157

100+ parts

-

1k+ parts

$0.142

10k+ parts

-

2,351

$0.157

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$0.142

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MKK Technologies

India . 1,618 parts In-Stock

1+ parts

$0.296

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1,618

$0.296

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DigiPath Technology Company

USA . 1,618 parts In-Stock

1+ parts

$0.296

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1,618

$0.296

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Component Stockers USA

USA . 92 parts In-Stock

1+ parts

$3.360

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92

$3.360

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AZTECH Wire

Italy . 248 parts In-Stock

1+ parts

$10.670

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248

$10.670

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Parana Technologies

USA . 1,780 parts In-Stock

1+ parts

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$0.188

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1,780

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$0.188

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Corphita

USA . 185 parts In-Stock

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185

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Kepictronics

USA . 88 parts In-Stock

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88

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Overview

Unlock the power of efficiency with the STPS20L120CT from STMicroelectronics, a leading name in semiconductor innovation. This high-performance Schottky diode excels in applications ranging from power management to renewable energy systems, offering exceptional reliability and minimal voltage drop. With its robust design and superior thermal performance, it ensures optimal operation, helping you achieve greater energy savings and enhanced system longevity. Experience quality and innovation that drive your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good thermal performance and high durability, ensuring reliability in various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration simplifies circuit design and makes it easier to integrate into existing systems.

Package Shape: RECTANGULAR

The rectangular shape optimizes space efficiency, making it suitable for compact circuit designs.

No. of Terminals: 3

With three terminals, this component offers flexibility in circuit connections, enhancing its versatility.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure installation and improves mechanical stability in applications.

Terminal Position: SINGLE

A single terminal position facilitates easier soldering and assembly, reducing manufacturing complexities.

Case Connection: CATHODE

The cathode connection supports efficient current flow in circuits, contributing to reliable performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), essential for power supply applications.

Maximum Forward Voltage (VF): 0.605 V

A low maximum forward voltage drop enhances efficiency, reducing energy loss in the circuit.

Maximum Output Current: 20 A

This diode can handle a maximum output current of 20 A, making it suitable for high-current applications.

Technology: SCHOTTKY

The Schottky technology reduces switching losses and allows for faster switching speeds, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal design provides a strong mechanical connection and is easier to handle during assembly.

Maximum Repetitive Peak Reverse Voltage: 120 V

With a high maximum reverse voltage, this diode can withstand significant voltage spikes, ensuring durability and reliability.

Maximum Non Repetitive Peak Forward Current: 200 A

The ability to handle a 200 A non-repetitive peak forward current enhances its robustness for handling surges and transients.

Diode Element Material: SILICON

Silicon as the diode element material is a proven choice for reliable and efficient diodes, ensuring consistent performance.

Technical Specifications

Diodes & Rectifiers STPS20L120CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.605 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20L120CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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