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STPS2045CH

STMicroelectronics

STPS2045CH by STMicroelectronics

STMicroelectronics STPS2045CH is a Schottky rectifier diode with 45V peak reverse voltage and 0.84V forward voltage. Featuring common cathode configuration, it has 2 elements in a plastic/epoxy package for efficiency applications. With max non-repetitive forward current of 150A, it is ideal for high-power circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,047 parts In-Stock

1+ parts

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6,047

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Anansix

USA . 2,653 parts In-Stock

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2,653

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Digiode

USA . 1,268 parts In-Stock

1+ parts

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1,268

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 330 parts In-Stock

1+ parts

$0.128

100+ parts

-

1k+ parts

$0.115

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330

$0.128

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$0.115

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MKK Technologies

India . 857 parts In-Stock

1+ parts

$0.240

100+ parts

-

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857

$0.240

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DigiPath Technology Company

USA . 857 parts In-Stock

1+ parts

$0.240

100+ parts

-

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857

$0.240

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AZTECH Wire

Italy . 707 parts In-Stock

1+ parts

$14.420

100+ parts

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707

$14.420

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Corphita

USA . 1,209 parts In-Stock

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1,209

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Parana Technologies

USA . 393 parts In-Stock

1+ parts

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$0.153

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393

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$0.153

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Overview

Experience the superior quality and reliability of the STPS2045CH diode by STMicroelectronics. Designed with cutting-edge technology, this Schottky rectifier diode offers maximum efficiency and performance in a wide range of applications. With a common cathode configuration and two elements, this diode provides seamless operation and enhanced functionality. Trust in STMicroelectronics' expertise and innovation to deliver value and benefits to your projects. Upgrade to the STPS2045CH and see the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Efficiently handles current flow and allows for easy integration into circuits.

Maximum Reverse Current: 100 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Sleek and compact design for easy installation and space-saving in electronic devices.

No. of Terminals: 3

Allows for proper connection within the circuit and ensures stability during operation.

Package Style (Meter): IN-LINE

Convenient package style for easy installation and connection in electronic circuits.

Application: EFFICIENCY

Designed for efficient energy conversion and power management, suitable for various electronic applications.

Terminal Position: SINGLE

Simplified terminal position for straightforward connection and installation.

Diode Type: RECTIFIER DIODE

Specifically designed for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.84 V

Low forward voltage drop ensures minimal power loss and high efficiency in energy conversion.

Technology: SCHOTTKY

Schottky diode technology provides fast switching speed and low power dissipation, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure connection to the circuit board.

No. of Elements: 2

Dual elements provide redundancy and improved current handling capability for enhanced reliability.

Maximum Repetitive Peak Reverse Voltage: 45 V

Suitable for applications requiring voltage rectification up to 45 volts, ensuring compatibility with various electronic systems.

Maximum Non Repetitive Peak Forward Current: 150 A

High forward current capability allows for handling peak currents efficiently without device failure.

Diode Element Material: SILICON

Silicon diode material offers reliable and consistent performance, ideal for various electronic applications.

Technical Specifications

Diodes & Rectifiers STPS2045CH attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

EFFICIENCY

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JESD-30 Code:

R-PSIP-T3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

100 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS2045CH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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