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STPS2030CT

STMicroelectronics

STPS2030CT by STMicroelectronics

STPS2030CT by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.42 V and supports up to 10 A output current. Its common cathode configuration and flange mount design enhance efficiency in various applications. Ideal for power management, it handles peak reverse voltages of 30 V.

Median Price

$1.097

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,609 parts In-Stock

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3,609

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Vyrian

USA . 3,518 parts In-Stock

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3,518

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Anansix

USA . 2,352 parts In-Stock

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2,352

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Microfarads

USA . 1,898 parts In-Stock

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1,898

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ComSIT USA

USA . 1,350 parts In-Stock

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1,350

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ComSIT Distribution GmbH

Germany . 350 parts In-Stock

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350

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Elcom Components

USA . 43 parts In-Stock

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43

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Bristol Electronics

USA . 40 parts In-Stock

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$1.097

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40

-

$1.097

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Zilex Electronics Inc.

Canada . 10 parts In-Stock

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10

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LittleDiode

UK . 2 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 738 parts In-Stock

1+ parts

$0.010

100+ parts

-

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738

$0.010

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IDEA Electronic Components Group

UK . 1,336 parts In-Stock

1+ parts

$0.161

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$0.145

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1,336

$0.161

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$0.145

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MKK Technologies

India . 2,239 parts In-Stock

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$0.303

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2,239

$0.303

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DigiPath Technology Company

USA . 2,239 parts In-Stock

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$0.303

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$0.303

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AZTECH Wire

Italy . 241 parts In-Stock

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$16.760

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241

$16.760

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Component Stockers USA

USA . 673 parts In-Stock

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$99.990

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673

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Perfect Parts

USA . 5,223 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,904 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,955 parts In-Stock

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Kepictronics

USA . 2,400 parts In-Stock

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2,400

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Parana Technologies

USA . 1,497 parts In-Stock

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$0.192

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1,497

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$0.192

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Corphita

USA . 439 parts In-Stock

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439

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Overview

Elevate your designs with the STPS2030CT diode from STMicroelectronics, a trusted leader in innovation. Crafted for exceptional efficiency and reliability, this Schottky rectifier ensures superior performance in demanding applications. Its robust build and common cathode configuration provide seamless integration, making it ideal for power management solutions. Experience enhanced energy savings and longevity, empowering your projects with unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material provides excellent protection against environmental factors, ensuring long-term reliability and performance.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for easier integration in circuit designs, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular package shape enables efficient use of board space, facilitating compact designs in electronic assemblies.

No. of Terminals: 3

Featuring three terminals allows for straightforward connections and improves flexibility in circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides robust mechanical support, ensuring secure attachment and stability within the device.

Application: EFFICIENCY

Designed for high efficiency, this diode minimizes power losses, making it ideal for energy-conscious applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and ensures reliable electrical connections, reducing the risk of failure.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring in various circuit layouts, enhancing user convenience.

Case Connection: CATHODE

The cathode case connection provides a straightforward electrical reference point for circuit designs.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is designed for converting alternating current (AC) to direct current (DC), ideal for power supply and voltage regulation applications.

Maximum Forward Voltage (VF): 0.42 V

A low forward voltage drop of 0.42 V ensures reduced power loss during operation, which enhances overall system efficiency.

Maximum Output Current: 10 A

With a maximum output current capability of 10 A, it can handle substantial loads, making it suitable for high-power applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode provides faster switching speeds and lower forward voltage drop compared to standard diodes, ideal for high-frequency applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers reliable electrical connections and is suitable for a variety of assembly techniques, ensuring durability.

No. of Elements: 2

With two elements, this diode configuration enhances rectification efficiency, allowing for better performance in power conversion tasks.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage of 30 V provides excellent resistance against voltage spikes, ensuring device reliability.

Maximum Non Repetitive Peak Forward Current: 180 A

Capable of handling a maximum non-repetitive peak forward current of 180 A, this diode is well-equipped to manage brief overload conditions without failure.

Diode Element Material: SILICON

Made from silicon, a widely used semiconductor material, this ensures reliable performance and efficiency in rectification applications.

Technical Specifications

Diodes & Rectifiers STPS2030CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS2030CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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