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STPS20170CG

STMicroelectronics

STPS20170CG by STMicroelectronics

STPS20170CG by STMicroelectronics is a Schottky rectifier diode designed for high voltage power applications. It features a max repetitive peak reverse voltage of 170 V, a forward current capacity of 10 A, and operates at a peak reflow temp of 245 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 8,500 parts In-Stock

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Vyrian

USA . 6,633 parts In-Stock

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Anansix

USA . 2,470 parts In-Stock

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Digiode

USA . 1,745 parts In-Stock

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J2 Sourcing AB

Sweden . 4 parts In-Stock

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IDEA Electronic Components Group

UK . 2,256 parts In-Stock

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$0.010

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$0.009

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$0.009

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MKK Technologies

India . 1,571 parts In-Stock

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$0.019

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DigiPath Technology Company

USA . 1,571 parts In-Stock

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AZTECH Wire

Italy . 695 parts In-Stock

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$8.710

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Corphita

USA . 4,610 parts In-Stock

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Kepictronics

USA . 1,650 parts In-Stock

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Parana Technologies

USA . 486 parts In-Stock

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Overview

Unlock the power of efficiency with the STPS20170CG Schottky rectifier from STMicroelectronics. Renowned for its superior quality and innovative technology, this compact diode excels in high-voltage power applications, ensuring reliable performance even in demanding environments. With a robust design and excellent thermal management, it provides exceptional value, minimizing energy loss while maximizing output. Choose STMicroelectronics for unmatched reliability and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides good insulation properties, making it suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for efficient use in circuits requiring shared grounding and simplifies the design.

Surface Mount: YES

Surface mount technology provides a compact size and is ideal for high-density applications, improving assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space, making it suitable for modern electronic design.

No. of Terminals: 2

With only two terminals, this device simplifies connections and reduces complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline packages save board space and support high-density mounting, enhancing the overall design flexibility.

Application: HIGH VOLTAGE POWER

Designed for high voltage power applications, this diode ensures reliability in demanding electrical environments.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and excellent corrosion resistance, contributing to long-term reliability.

Terminal Position: SINGLE

A single terminal position simplifies layout and assembly processes, speeding up the manufacturing phase.

Case Connection: CATHODE

The cathode connection is crucial for efficient current flow, optimizing the diode's performance in circuits.

Maximum Time At Peak Reflow Temperature: 30 s

The diode can withstand up to 30 seconds at peak reflow temperature, ensuring robust performance during soldering processes.

Peak Reflow Temperature: 245 °C

A peak reflow temperature of 245 °C accommodates standard soldering processes, enhancing compatibility with various PCB assemblies.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it suitable for power supply and signal rectification applications.

Maximum Forward Voltage (VF): 0.75 V

A low maximum forward voltage drop of 0.75V maximizes efficiency and minimizes power loss during operation.

Maximum Output Current: 10 A

With a maximum output current of 10 A, this diode is capable of handling substantial loads, making it versatile for various applications.

Technology: SCHOTTKY

Schottky technology ensures fast switching capabilities, low forward voltage drop, and increased efficiency in power circuits.

Terminal Form: GULL WING

Gull wing terminals allow for easier handling during manufacturing and enhance reliability through better mechanical stability.

No. of Elements: 2

Having two elements provides redundancy and enables better performance in applications that require multiple diodes.

Maximum Repetitive Peak Reverse Voltage: 170 V

Able to withstand up to 170 V of repetitive peak reverse voltage, the diode is suitable for a wide range of high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 180 A

A maximum non-repetitive peak forward current of 180 A ensures the diode can handle transient overloads, protecting the circuit.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties and stability, ensuring reliable and efficient operation.

Technical Specifications

Diodes & Rectifiers STPS20170CG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

170 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS20170CG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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