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STPS20120CFP

STMicroelectronics

STPS20120CFP by STMicroelectronics

STPS20120CFP from STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.58 V and supports up to 20 A output current. It features a common cathode configuration in a flange mount package, ideal for power supply applications. With a peak reverse voltage of 120 V, it ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,858 parts In-Stock

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7,858

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Digiode

USA . 916 parts In-Stock

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916

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Anansix

USA . 712 parts In-Stock

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712

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,174 parts In-Stock

1+ parts

$0.131

100+ parts

-

1k+ parts

$0.118

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2,174

$0.131

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$0.118

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MKK Technologies

India . 1,353 parts In-Stock

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$0.246

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1,353

$0.246

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DigiPath Technology Company

USA . 1,353 parts In-Stock

1+ parts

$0.246

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1,353

$0.246

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AZTECH Wire

Italy . 907 parts In-Stock

1+ parts

$15.820

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907

$15.820

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Corphita

USA . 2,770 parts In-Stock

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2,770

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Parana Technologies

USA . 647 parts In-Stock

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$0.156

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647

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$0.156

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Overview

Unlock unparalleled performance with the STPS20120CFP Schottky rectifier diode from STMicroelectronics. Renowned for its exceptional quality and reliability, this diode is engineered to enhance efficiency in demanding applications such as power supplies and motor drives. With its robust design and superior thermal management, customers benefit from increased durability and reduced energy losses, ensuring a seamless operation that translates to lower costs and higher productivity. Choose excellence—choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection against environmental factors, ensuring long-term reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration allows for simplified circuit design and reduces the complexity in connections.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient space utilization on circuit boards.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections, enhancing the adaptability of the diode.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure installation and better mechanical stability in various applications.

Terminal Position: SINGLE

A single terminal position simplifies the assembly process and improves soldering efficiency.

Case Connection: ISOLATED

Isolated case connections prevent unwanted electrical interactions, enhancing safety and performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), making it ideal for power applications.

Maximum Forward Voltage (VF): 0.58 V

This low forward voltage drop translates to higher efficiency and lower power loss in the circuit.

Maximum Output Current: 20 A

With a high output current capability, this diode can handle demanding applications effectively.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drops, making them well-suited for high-frequency applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easier to solder, ensuring strong electrical connections.

No. of Elements: 2

Two elements in the configuration contribute to enhanced performance and versatility in various applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

A high reverse voltage rating protects the diode from voltage spikes, ensuring reliability in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 150 A

This high peak forward current allows the diode to handle surges, providing extra protection and versatility in power circuits.

Diode Element Material: SILICON

Silicon is widely used for its excellent electrical characteristics and reliability, making this diode a dependable choice.

Technical Specifications

Diodes & Rectifiers STPS20120CFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.58 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20120CFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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