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STPS20120CB-TR

STMicroelectronics

STPS20120CB-TR by STMicroelectronics

STPS20120CB-TR by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max reverse voltage of 120V, low forward voltage drop of 1.02V, and handles peak forward current up to 150A in a compact surface mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,976 parts In-Stock

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9,976

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Digiode

USA . 3,369 parts In-Stock

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3,369

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Anansix

USA . 2,184 parts In-Stock

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2,184

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,548 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

$0.112

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1,548

$0.124

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$0.112

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MKK Technologies

India . 1,882 parts In-Stock

1+ parts

$0.234

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1,882

$0.234

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DigiPath Technology Company

USA . 1,882 parts In-Stock

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$0.234

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1,882

$0.234

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AZTECH Wire

Italy . 360 parts In-Stock

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$16.700

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360

$16.700

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kepictronics

USA . 1,732 parts In-Stock

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Corphita

USA . 1,565 parts In-Stock

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1,565

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Parana Technologies

USA . 486 parts In-Stock

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$0.148

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486

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$0.148

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Overview

Unlock superior performance with the STPS20120CB-TR Schottky rectifier from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a robust solution perfect for power applications. This compact surface mount diode offers exceptional efficiency and reliability, ensuring optimal energy management in your designs. Elevate your projects with a trusted component that guarantees lower power loss and higher durability—experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent insulation and mechanical protection, making the diode reliable in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

With a common cathode configuration, this diode is ideal for applications requiring multiple diodes to be connected to a shared cathode, simplifying circuit design.

Surface Mount: YES

Being a surface mount diode allows for easier integration into compact circuit boards, saving space and enabling automated assembly.

Maximum Reverse Current: 10 uA

The low maximum reverse current of 10 uA ensures minimal leakage, contributing to enhanced efficiency in power applications.

Package Shape: RECTANGULAR

The rectangular package shape is designed to optimize space on the PCB while ensuring effective thermal dissipation.

No. of Terminals: 2

Having only two terminals simplifies the connection and layout process in circuit design, making it user-friendly.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in reducing the overall footprint on the PCB, accommodating more components in compact designs.

Application: POWER

The diode's specification for power applications highlights its ability to handle significant loads effectively, making it suitable for high-power circuits.

Terminal Position: SINGLE

A single terminal position simplifies integration into PCB designs, ensuring ease of placement during assembly.

Case Connection: CATHODE

The cathode connection enhances the usability in various rectification and regulation applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed to convert alternating current (AC) to direct current (DC), making it essential for power supply circuits.

Maximum Forward Voltage (VF): 1.02 V

The lower forward voltage of 1.02 V ensures efficient operation with minimal power loss during conductivity.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drops, improving efficiency in high-frequency applications.

Terminal Form: GULL WING

Gull wing terminals provide an excellent mechanical and electrical connection, enhancing reliability in surface mount applications.

No. of Elements: 2

With two elements, this diode can effectively handle complex rectification tasks in various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 120 V

The ability to withstand a peak reverse voltage of 120 V makes this diode suitable for high-voltage applications.

Maximum Non Repetitive Peak Forward Current: 150 A

A high non-repetitive peak forward current of 150 A allows this diode to handle substantial surges in current, making it ideal for demanding power applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures good thermal stability and performance across a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers STPS20120CB-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.02 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

10 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS20120CB-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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