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STPS1L60

STMicroelectronics

STPS1L60 by STMicroelectronics

STPS1L60 by STMicroelectronics is a Schottky rectifier diode with a max output current of 1 A and a peak reverse voltage of 60 V. It operates at up to 150 °C, featuring an isolated case connection in a long-form axial package. Ideal for efficient power management applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,873 parts In-Stock

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2,873

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Digiode

USA . 1,120 parts In-Stock

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1,120

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Pegasus Components GmbH

Germany . 190 parts In-Stock

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190

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Anansix

USA . 154 parts In-Stock

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154

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LittleDiode

UK . 50 parts In-Stock

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50

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ECAB

Sweden . 20 parts In-Stock

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20

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IDEA Electronic Components Group

UK . 1,391 parts In-Stock

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$0.086

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$0.078

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1,391

$0.086

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$0.078

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MKK Technologies

India . 295 parts In-Stock

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$0.163

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295

$0.163

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DigiPath Technology Company

USA . 295 parts In-Stock

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$0.163

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295

$0.163

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AZTECH Wire

Italy . 1,144 parts In-Stock

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$11.940

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$11.940

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Corphita

USA . 3,006 parts In-Stock

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3,006

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Ashlea Components Ltd (Excess)

UK . 1,500 parts In-Stock

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Parana Technologies

USA . 460 parts In-Stock

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$0.103

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460

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Overview

Elevate your projects with the STPS1L60 from STMicroelectronics, a premium Schottky rectifier diode designed to deliver unmatched efficiency and reliability. With its robust construction and impressive performance under high temperatures, this diode is the perfect choice for power management in consumer electronics, automotive applications, and renewable energy systems. Trust in STMicroelectronics' commitment to quality, ensuring you benefit from superior longevity and stability in every application. Choose STPS1L60 for outstanding value and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the diode suitable for various applications.

Config: SINGLE

The single configuration allows for straightforward integration into circuits, optimizing space and simplifying design.

Package Shape: ROUND

The round package shape facilitates easy mounting and alignment within systems, ensuring stability during operation.

No. of Terminals: 2

Having two terminals simplifies connections in your circuit, promoting ease of use and installation.

Package Style (Meter): LONG FORM

The long form package style provides ample space for soldering and connections, improving assembly quality and reliability.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures that this diode can perform reliably in high-temperature environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and prevents oxidation, leading to improved electrical performance.

Terminal Position: AXIAL

The axial terminal position allows for easy integration into PCB layouts and provides good mechanical stability.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of short circuits, enhancing safety and reliability in circuit applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.56 V

A low forward voltage drop of 0.56V ensures higher efficiency and less energy loss during operation.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode is suitable for a variety of moderate power applications.

Technology: SCHOTTKY

Utilizing Schottky technology allows for faster switching speeds and lower forward voltage drops, leading to improved performance.

Terminal Form: WIRE

The wire terminal form provides flexibility in installations and connections, allowing for easier handling during assembly.

Maximum Repetitive Peak Reverse Voltage: 60 V

A high reverse voltage rating of 60V accommodates a wide range of applications while ensuring reliability under stress.

Maximum Non Repetitive Peak Forward Current: 40 A

The capability to handle a non-repetitive peak forward current of 40A allows this diode to deal with sudden surges effectively.

Diode Element Material: SILICON

Silicon as the diode element material ensures good conductivity and reliability, making it suitable for diverse applications.

Technical Specifications

Diodes & Rectifiers STPS1L60 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS1L60 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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