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STPS15M80CT

STMicroelectronics

STPS15M80CT by STMicroelectronics

STMicroelectronics' STPS15M80CT is a Schottky rectifier diode with 80V reverse voltage, 7.5A output current, and 0.475V forward voltage. Commonly used for efficiency applications due to its dual-element design and matte tin finish in a flange mount package style.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 48 parts In-Stock

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$0.770

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48

$0.770

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Chip1Stop

Japan . 48 parts In-Stock

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$1.410

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Verical

USA . 48 parts In-Stock

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Digiode

USA . 4,892 parts In-Stock

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$0.723

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Vyrian

USA . 6,580 parts In-Stock

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Anansix

USA . 1,716 parts In-Stock

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Bristol Electronics

USA . 880 parts In-Stock

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$1.219

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$0.682

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880

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$1.219

$0.682

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Dan-Mar Components

USA . 880 parts In-Stock

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880

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IDEA Electronic Components Group

UK . 1,774 parts In-Stock

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$0.058

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$0.052

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MKK Technologies

India . 1,472 parts In-Stock

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$0.109

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DigiPath Technology Company

USA . 1,472 parts In-Stock

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$0.109

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.169

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$0.154

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$0.139

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Corphita

USA . 4,237 parts In-Stock

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$0.685

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AZTECH Wire

Italy . 123 parts In-Stock

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$13.330

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Perfect Parts

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Assy Fe

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Parana Technologies

USA . 825 parts In-Stock

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$0.069

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825

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$0.069

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Overview

Boost your efficiency with the STPS15M80CT by STMicroelectronics. This top-quality diode offers a common cathode configuration with two elements, providing reliable performance and easy installation. Ideal for a wide range of applications, this Schottky rectifier diode delivers a maximum output current of 7.5 A and a maximum repetitive peak reverse voltage of 80 V. Trust in STMicroelectronics' reputation for excellence and innovation, and experience the value and benefits that the STPS15M80CT can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient and reliable operation in circuit designs.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures easy mounting and integration into circuit boards.

No. of Terminals: 3

Having 3 terminals allows for flexible connection options in different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style makes it convenient for installation and mounting in electronic devices.

Application: EFFICIENCY

Designed for efficiency in various applications, these diodes help in improving performance and energy savings.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and reduces chances of error in installation.

Case Connection: CATHODE

Having the cathode as the case connection allows for efficient heat dissipation and electrical performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is suitable for converting AC to DC power in electronic circuits.

Maximum Forward Voltage (VF): 0.475 V

The low maximum forward voltage helps in reducing power losses and improving efficiency in the circuit.

Maximum Output Current: 7.5 A

With a high maximum output current, this product can handle significant loads in the circuit without overheating.

Technology: SCHOTTKY

The Schottky technology used in these diodes allows for faster switching speeds and lower forward voltage drop.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the mounting process and ensures secure connections in the circuit board.

No. of Elements: 2

Having 2 elements in the diode structure provides redundancy and reliability in the circuit operation.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high maximum repetitive peak reverse voltage ensures protection against voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 220 A

With a high maximum non-repetitive peak forward current rating, this product can handle short-term high current surges effectively.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good electrical performance and stability in various operating conditions.

Technical Specifications

Diodes & Rectifiers STPS15M80CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.475 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS15M80CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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