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STPS1545G

STMicroelectronics

STPS1545G by STMicroelectronics

STPS1545G by STMicroelectronics is a fast recovery rectifier diode with a max output current of 15 A and peak reverse voltage of 45 V. It features a compact surface mount design and operates at up to 175 °C, ideal for power applications. Its Schottky technology ensures efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,747 parts In-Stock

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2,747

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Digiode

USA . 2,017 parts In-Stock

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2,017

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Anansix

USA . 1,210 parts In-Stock

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1,210

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Sunrise Surplus Inc.

USA . 160 parts In-Stock

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160

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,032 parts In-Stock

1+ parts

$0.152

100+ parts

-

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$0.137

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2,032

$0.152

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$0.137

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MKK Technologies

India . 2,175 parts In-Stock

1+ parts

$0.285

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2,175

$0.285

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DigiPath Technology Company

USA . 2,175 parts In-Stock

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$0.285

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2,175

$0.285

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AZTECH Wire

Italy . 777 parts In-Stock

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$16.660

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777

$16.660

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Corphita

USA . 4,380 parts In-Stock

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4,380

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Perfect Parts

USA . 3,870 parts In-Stock

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3,870

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Parana Technologies

USA . 1,039 parts In-Stock

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$0.182

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1,039

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$0.182

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Overview

Unlock unparalleled efficiency with the STPS1545G from STMicroelectronics, a leader in semiconductor innovation. Designed for fast recovery power applications, this high-performance Schottky rectifier diode ensures low forward voltage and exceptional reliability, empowering your designs to thrive even under demanding conditions. Its compact surface mount package simplifies integration, while ST's commitment to quality means you can trust in long-lasting performance for all your electronic needs. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and reliable performance in various environmental conditions.

Config: SINGLE

The single configuration simplifies circuit design, making integration into existing systems easier.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of PCB space, enhancing the overall performance of the product.

Package Shape: RECTANGULAR

The rectangular shape supports better thermal management, facilitating heat dissipation during operation.

No. of Terminals: 2

Having two terminals simplifies connectivity and reduces the complexity of circuit layout.

Package Style (Meter): SMALL OUTLINE

The small outline package style optimizes space on the PCB, making it suitable for high-density applications.

Application: FAST RECOVERY POWER

Designed for fast recovery applications, this diode ensures reduced switching losses, making it efficient for power management.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature of 175 °C allows for use in demanding thermal environments, enhancing reliability.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability, ensuring strong mechanical and electrical connections.

Terminal Position: SINGLE

Single terminal position aids in straightforward assembly and reduces risk of misplacement during manufacturing.

Case Connection: CATHODE

The cathode connection allows for direct integration into standard circuit designs, enhancing compatibility.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds helps maintain component integrity during soldering processes.

Peak Reflow Temperature °C: 245

The peak reflow temperature of 245 °C ensures compatibility with standard soldering processes used in assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), ideal for power rectification.

Maximum Forward Voltage (VF): 0.57 V

With a low maximum forward voltage drop, it reduces power loss and increases overall efficiency in circuits.

Maximum Output Current: 15 A

A maximum output current rating of 15A provides versatility for high-performance applications.

Technology: SCHOTTKY

Utilizing Schottky technology minimizes forward voltage drops and enables fast switching characteristics.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability and facilitates easy soldering onto PCB.

Maximum Repetitive Peak Reverse Voltage: 45 V

A peak reverse voltage rating of 45V ensures reliable performance in a wide range of circuit conditions.

Maximum Non Repetitive Peak Forward Current: 220 A

With a high non-repetitive peak forward current capability, it can withstand transient conditions without failure.

Diode Element Material: SILICON

Silicon as a diode element material ensures stable performance and good thermal properties for efficient power conversion.

Technical Specifications

Diodes & Rectifiers STPS1545G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

220 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

STPS1545G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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