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STPS1545CB-TR

STMicroelectronics

STPS1545CB-TR by STMicroelectronics

STMicroelectronics' STPS1545CB-TR is a Schottky rectifier diode with 45V peak reverse voltage, 0.57V forward voltage, and 7.5A output current. Commonly used in fast recovery power applications due to its high non-repetitive peak forward current of 150A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,401 parts In-Stock

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5,401

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Anansix

USA . 2,451 parts In-Stock

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2,451

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Digiode

USA . 1,827 parts In-Stock

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1,827

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IDEA Electronic Components Group

UK . 1,041 parts In-Stock

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$0.020

100+ parts

-

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$0.018

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1,041

$0.020

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$0.018

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MKK Technologies

India . 1,885 parts In-Stock

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$0.038

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1,885

$0.038

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DigiPath Technology Company

USA . 1,885 parts In-Stock

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$0.038

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1,885

$0.038

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AZTECH Wire

Italy . 902 parts In-Stock

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$12.900

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902

$12.900

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Component Stockers USA

USA . 699 parts In-Stock

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$99.990

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699

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,231 parts In-Stock

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Corphita

USA . 3,970 parts In-Stock

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3,970

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Parana Technologies

USA . 719 parts In-Stock

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$0.024

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719

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$0.024

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Overview

Unleash the power of innovation with the STPS1545CB-TR by STMicroelectronics. Designed with precision and reliability in mind, this diode offers unparalleled performance in fast recovery power applications. With a maximum output current of 7.5A and a maximum repetitive peak reverse voltage of 45V, this Schottky technology diode ensures optimal functionality and efficiency. Elevate your projects with the quality and expertise of STMicroelectronics, where cutting-edge technology meets exceptional value. Experience the difference with the STPS1545CB-TR and unlock endless possibilities in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy circuit integration and reliable performance.

Surface Mount: YES

The surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape allows for space-saving installation, making it suitable for compact electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the design and connection process, reducing complexity in circuitry.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications where space is limited, providing flexibility in design.

Application: FAST RECOVERY POWER

Designed for fast recovery power applications, these diodes are efficient in handling high-frequency signals and power fluctuations.

Terminal Position: SINGLE

Single terminal position ensures easy and secure connectivity in the circuit, improving overall reliability.

Case Connection: CATHODE

Cathode case connection simplifies the circuit design and enhances the performance of the diodes in typical applications.

Diode Type: RECTIFIER DIODE

As rectifier diodes, these components are specifically designed for converting AC to DC current efficiently and reliably.

Maximum Forward Voltage (VF): 0.57 V

Low forward voltage ensures minimal power loss and efficient energy conversion in the circuit.

Maximum Output Current: 7.5 A

High maximum output current capacity allows these diodes to handle substantial power loads with ease and reliability.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low reverse leakage, making these diodes suitable for high-speed and high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable solder connections, ensuring long-term stability in the circuit.

No. of Elements: 2

Having 2 diode elements in the package allows for more versatility in circuit design and functionality.

Maximum Repetitive Peak Reverse Voltage: 45 V

High maximum repetitive peak reverse voltage ensures stable and safe operation of the diodes in various voltage conditions.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non-repetitive peak forward current capability allows these diodes to withstand sudden power surges and spikes effectively.

Diode Element Material: SILICON

Silicon diode element material provides reliable performance and longevity, making these diodes a durable choice for long-term use.

Technical Specifications

Diodes & Rectifiers STPS1545CB-TR attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS1545CB-TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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