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STPS1170AFN

STMicroelectronics

STPS1170AFN by STMicroelectronics

STPS1170AFN by STMicroelectronics is a Schottky rectifier diode designed for high efficiency applications. It features a max reverse voltage of 160V, forward voltage drop of 0.89V, and operates up to 175 °C. Ideal for compact surface mount designs with low reverse current (1.5µA).

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,692 parts In-Stock

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2,692

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Digiode

USA . 1,596 parts In-Stock

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1,596

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Anansix

USA . 708 parts In-Stock

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708

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 907 parts In-Stock

1+ parts

$0.121

100+ parts

-

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$0.108

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907

$0.121

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$0.108

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MKK Technologies

India . 2,071 parts In-Stock

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$0.227

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2,071

$0.227

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DigiPath Technology Company

USA . 2,071 parts In-Stock

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$0.227

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2,071

$0.227

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AZTECH Wire

Italy . 566 parts In-Stock

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$11.690

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566

$11.690

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Alle Elektronik GmbH

Germany . 4,471 parts In-Stock

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Corphita

USA . 4,059 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 401 parts In-Stock

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$0.144

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401

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$0.144

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Overview

Unlock exceptional efficiency with the STPS1170AFN from STMicroelectronics, a leader in semiconductor innovation. This high-performance Schottky rectifier diode offers remarkable reliability for your applications, boasting a compact design and impressive thermal performance. With minimal reverse leakage and robust voltage handling, it ensures seamless operation in power supplies and energy management systems. Experience enhanced productivity and durability, making it the ideal choice for today's demanding electronic environments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances the durability and thermal resistance of the diode, making it suitable for a variety of applications.

Config: SINGLE

Single configuration allows for simpler circuit design and integration, making it easier for engineers to incorporate into their systems.

Surface Mount: YES

Surface mount capability makes it compatible with modern PCB technology, enabling a compact design and facilitating automated assembly.

Maximum Reverse Current: 1.5 uA

A low reverse current ensures minimal power loss in reverse bias conditions, enhancing efficiency and longevity of the diode.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on printed circuit boards, contributing to higher device density.

Reverse Test Voltage: 160 V

The ability to withstand 160 V reverse voltage makes this diode suitable for high-voltage applications, providing safety and reliability.

No. of Terminals: 2

A 2-terminal design simplifies connections and reduces potential points of failure, ensuring greater reliability in circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density layouts, ideal for space-constrained applications in modern electronics.

Application: EFFICIENCY

Designed with efficiency in mind, this diode minimizes energy loss during operation, making it a strong choice for energy-conscious designs.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature allows the diode to function effectively in demanding environments without risk of failure.

Terminal Position: DUAL

Dual terminal position enhances the versatility of the diode in different layouts and applications for better design flexibility.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it efficiently converts alternating current (AC) to direct current (DC), a crucial function in power supply circuits.

Maximum Forward Voltage (VF): 0.89 V

A low forward voltage drop provides higher efficiency during operation, reducing energy loss in the forward conduction phase.

Maximum Output Current: 1 A

The diode supports a maximum output current of 1 A, making it well-suited for a variety of applications including power management.

Technology: SCHOTTKY

Utilizing Schottky technology offers faster switching speeds and lower forward voltage drops, enhancing the diode’s performance.

Terminal Form: FLAT

Flat terminal form facilitates easier soldering and improves the overall mechanical stability of the component on the PCB.

Maximum Repetitive Peak Reverse Voltage: 160 V

Ability to handle 160 V peak reverse voltage enhances reliability in high-voltage applications, providing better protection against breakdown.

Maximum Non Repetitive Peak Forward Current: 45 A

A high transient current rating permits handling of peak loads without immediate failure, ensuring robustness in demanding applications.

Diode Element Material: SILICON

Silicon provides excellent electrical characteristics, making it a reliable choice for most rectification applications, with good temperature stability.

Technical Specifications

Diodes & Rectifiers STPS1170AFN attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.89 V

JESD-30 Code:

R-PDSO-F2

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

160 V

Maximum Reverse Current:

1.5 uA

Reverse Test Voltage:

160 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

STPS1170AFN Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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