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STPS10L45CT

STMicroelectronics

STPS10L45CT by STMicroelectronics

STPS10L45CT by STMicroelectronics is a Schottky rectifier diode ideal for power applications. It features a max forward voltage of 0.59V, supports up to 5A output current, and has a peak reverse voltage of 45V. Its flange mount design ensures easy integration in circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,638 parts In-Stock

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Digiode

USA . 2,220 parts In-Stock

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2,220

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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2,000

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Anansix

USA . 652 parts In-Stock

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Zilex Electronics Inc.

Canada . 350 parts In-Stock

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350

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 992 parts In-Stock

1+ parts

$0.043

100+ parts

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$0.039

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992

$0.043

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$0.039

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MKK Technologies

India . 2,053 parts In-Stock

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$0.081

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$0.081

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DigiPath Technology Company

USA . 2,053 parts In-Stock

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$0.081

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2,053

$0.081

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AZTECH Wire

Italy . 751 parts In-Stock

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$11.500

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751

$11.500

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Perfect Parts

USA . 9,041 parts In-Stock

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Corphita

USA . 3,127 parts In-Stock

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Parana Technologies

USA . 1,785 parts In-Stock

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$0.052

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$0.052

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Assy Fe

Spain . 850 parts In-Stock

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Kepictronics

USA . 100 parts In-Stock

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GreenTree Electronics

Israel . 100 parts In-Stock

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Overview

Unlock superior performance with the STPS10L45CT Schottky rectifier from STMicroelectronics. Engineered for reliability and efficiency, this diode excels in power applications, ensuring minimal voltage drop and rapid switching to enhance your designs. With a trusted name in innovation, STMicroelectronics guarantees quality and durability, empowering your projects with robust solutions that improve energy management and operational effectiveness. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy enhances the product's resistance to environmental factors and improves longevity.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration enables efficient power management in applications requiring multiple diode functionalities.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCB layouts.

No. of Terminals: 3

With three terminals, this component can simplify circuit design, allowing for convenient integration.

Package Style (Meter): FLANGE MOUNT

Flange mount provides a robust and secure installation, ensuring reliable operation in demanding environments.

Application: POWER

Designed specifically for power applications, ensuring high reliability and performance where it matters most.

Terminal Finish: MATTE TIN

Matte tin coating improves solderability and enhances corrosion resistance, leading to better long-term reliability.

Terminal Position: SINGLE

A single terminal position simplifies the installation process and minimizes wiring complexity.

Case Connection: CATHODE

This connection type is advantageous for certain circuit configurations, enhancing operational simplicity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.59 V

A low forward voltage drop minimizes power loss, enhancing energy efficiency during operation.

Maximum Output Current: 5 A

A high output current rating allows it to handle substantial loads, making it suitable for demanding applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low voltage drop, ensuring high efficiency and reliability.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a strong mechanical connection, providing durability in rugged environments.

No. of Elements: 2

Featuring two elements enhances the diode's ability to manage current and improve efficiency.

Maximum Repetitive Peak Reverse Voltage: 45 V

A high reverse voltage capability makes it suitable for a variety of power applications while preventing breakdown.

Maximum Non Repetitive Peak Forward Current: 150 A

The ability to handle high forward currents temporarily makes it robust against surge conditions.

Diode Element Material: SILICON

Silicon material provides excellent thermal stability and reliability, making it a preferred choice for high-performance applications.

Technical Specifications

Diodes & Rectifiers STPS10L45CT attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREEWHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STPS10L45CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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